E
Elyes Nefzaoui
Researcher at ESIEE Paris
Publications - 48
Citations - 1062
Elyes Nefzaoui is an academic researcher from ESIEE Paris. The author has contributed to research in topics: Radiative transfer & Silicon. The author has an hindex of 11, co-authored 43 publications receiving 695 citations. Previous affiliations of Elyes Nefzaoui include Institut Pprime & University of Paris.
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Modeling and forecasting building energy consumption: A review of data-driven techniques
TL;DR: A review of studies developing data-driven models for building scale applications with a focus on the input data characteristics and data pre-processing methods, the building typologies considered, the targeted energy end-uses and forecasting horizons, and accuracy assessment.
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Energy and comfort assessment in educational building: Case study in a French university campus
TL;DR: In this article, an energy audit protocol for higher education buildings is proposed to tackle simultaneously the questions of thermal comfort and energy efficiency for buildings constructed before current thermal regulation codes, which is known to be high-energy consuming.
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Impact of a liquid drop on a granular medium: Inertia, viscosity and surface tension effects on the drop deformation
Elyes Nefzaoui,Olivier Skurtys +1 more
TL;DR: In this article, an experimental study of liquid drop impacts on a granular medium (glass beads) is proposed, where four fluids were used to vary physical properties: pure distilled water, water with glycerol at two concentrations 1:1 and 1:2 v/v and water with surfactant (Tween 20) at the concentration of 0.1 ǫ l−1 (≈1 CMC).
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Radiative thermal rectification using superconducting materials
TL;DR: In this article, a far-field radiative thermal rectifier based on high-temperature superconducting materials with a rectification ratio up to 80% was presented, which is among the highest reported in literature.
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Simple far-field radiative thermal rectifier using Fabry–Perot cavities based infrared selective emitters
TL;DR: A thermal rectification device concept based on far-field radiative exchange between two selective emitters, constituted by two multilayer samples made of metallic and semiconductor thin films, which shows a rectification ratio increasing with temperature up to 19% for a temperature difference of ΔT=370 K.