Showing papers by "Emmanuel Dubois published in 1996"
TL;DR: In this article, the influence of the gate corner on the threshold voltage roll-off was investigated using both drift-diffusion and Monte Carlo simulations, and a steeper subthreshold slope was obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart.
Abstract: Sub-0.1-/spl mu/m planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO/sub 2/ interface.
55 citations
Proceedings Article•
01 Sep 1996TL;DR: In this paper, a non-quasi-static (NQS) model of SOI-MOSFETs is presented, based on the charge sheet approach, which is valid for all regions of operation.
Abstract: A new Non-Quasi-Static (NQS) model of SOI-MOSFETs is presented in this paper. This model, based on the charge sheet approach, is valid for all regions of operation. Excellent agreement is found with 2D device simulations both under static and fast transient conditions. This new model proves to be useful to simulate analog circuits where NQS phenomena have a first order effect on circuit performance.