Showing papers by "Emmanuel Dubois published in 2002"
18 Sep 2002
TL;DR: The notation ASUR++ builds upon the previous one, called ASUR, and is dedicated to handling the mobility of users and enable a designer to express physical relationships among entities involved in the system.
Abstract: In this paper we present a notation, ASUR++, for describing mobile systems that combine physical and digital entities. The notation ASUR++ builds upon our previous one, called ASUR. The new features of ASUR++ are dedicated to handling the mobility of users and enable a designer to express physical relationships among entities involved in the system. The notation and its usefulness are illustrated in the context of the design of an augmented museum gallery.
71 citations
TL;DR: An alternative MOSFET architecture based on the use of low barrier Schottky source/drain (S/D) contacts coupled to a thin silicon-on-insulator (SOI) film is described in this article.
Abstract: An alternative MOSFET architecture based on the use of low barrier Schottky source/drain (S/D) contacts coupled to a thin silicon-on-insulator (SOI) film is described. Two-dimensional device simulations are used to demonstrate the advantage of low Schottky barrier S/D over conventional implanted technologies in terms of current drive capabilities. It is shown that the silicide penetration in the silicon does not increase the contact resistance for this structure while a severe degradation of the current drive is observed for conventional MOS architectures. Experiments conducted on Pt/Ge metallic stacks on p-type silicon show that very low Schottky barriers to hole can be obtained (∼50 meV).
62 citations
TL;DR: This work defines the integration of the computer-provided entities with the real ones using two new properties: compatibility and continuity and empirically study the two properties to highlight their impact on interaction.
Abstract: Integrating computer-based information into the real world of the user is becoming a crucial challenge for the designers of interactive systems. The Augmented Reality (AR) paradigm illustrates this trend. Information is provided by an AR system to facilitate or to enrich the natural way in which the user interacts with the real environment. We focus on the output of such systems and, in particular, on the smooth integration of additional information in the real environment of the user. We characterize the integration of the computer-provided entities with the real ones using two new properties: compatibility and continuity. After defining the two properties, we provide factors and an analytical method needed for assessing them. We also empirically study the two properties to highlight their impact on interaction. The CASPER system, developed in our teams, is used to illustrate the discussion.
34 citations
TL;DR: Two notations, ASUR and UMLi, are presented that can be used to capture design-significant features of AR systems and compared in terms of the types of support they provide and how they might be used together.
Abstract: There is growing interest in augmented reality (AR) as technologies are developed that enable ever smoother integration of computer capabilities into the physical objects that populate the everyday lives of users. However, despite this growing importance of AR technologies, there is little tool support for the design of AR systems. In this paper, we present two notations, ASUR and UMLi, that can be used to capture design-significant features of AR systems. ASUR is a notation for designing user interactions in AR environments. UMLi is a notation for designing the user interfaces to interactive systems. We use each notation to specify the design of an augmented museum gallery. We then compare the two notations in terms of the types of support they provide and consider how they might be used together.
18 citations
TL;DR: In this article, a fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs.
Abstract: A fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs. The novel important feature of our CAD-oriented approach consists in a rigorous treatment of the nonquasistatic charge redistribution that ensures accuracy under fast switching conditions. The capabilities of this model are exemplified through the simulation of an analog transmission gate to evaluate the impact of charge sharing effects.
5 citations