Showing papers by "Enakshi Bhattacharya published in 1996"
TL;DR: In this article, the authors have grown undoped and doped amorphous silicon (a-Si) by low-pressure chemical vapour deposition (LPCVD) from silane at 550 and.
Abstract: We have grown undoped and doped amorphous silicon (a-Si) by low-pressure chemical vapour deposition (LPCVD) from silane at 550 and . The samples were then post-hydrogenated in an RF hydrogen plasma. The material is characterized by measurement of conductivity, hydrogen content and the slope of the Urbach tail. The effect of fast thermal quenching on the conductivity is investigated and the thermal equilibrium temperature is measured for doped LPCVD a-Si.