E
Enes Ugur
Researcher at University of Texas at Dallas
Publications - 38
Citations - 911
Enes Ugur is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: Power cycling & Power semiconductor device. The author has an hindex of 12, co-authored 38 publications receiving 495 citations. Previous affiliations of Enes Ugur include Yıldız Technical University.
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A Bidirectional Nonisolated Multi-Input DC–DC Converter for Hybrid Energy Storage Systems in Electric Vehicles
TL;DR: A novel bidirectional nonisolated multi-input converter (MIC) topology for hybrid systems to be used in electric vehicles composed of energy storage systems (ESSs) with different electrical characteristics is proposed.
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Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling
TL;DR: In this article, a comprehensive long-term reliability analysis of commercially available SiC power mosfet s under high temperature operation and high temperature swing, degradation related key precursors, and possible causes behind them are presented.
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Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Fei Yang,Enes Ugur,Bilal Akin +2 more
TL;DR: In this article, the authors investigated the aging's impacts on various temperature sensitive electrical parameters (TSEPs) in SiC mosfets and found that the package degradation's impact on TSEPs was more significant than the gate oxide instability.
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Experimental performance assessment of an online energy management strategy for varying renewable power production suppression
Ozan Erdinc,Onur Elma,Mehmet Uzunoglu,Ugur Savas Selamogullari,Bulent Vural,Enes Ugur,Ali Rifat Boynuegri,Serkan Dusmez +7 more
TL;DR: In this article, a hybrid system consisting of a wind turbine for utilizing the wind energy, photovoltaic panels for solar energy, fuel cell for providing back-up power and a battery unit for storing the possible excess energy production and supplying the transient load is considered.
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Real-Time Aging Detection of SiC MOSFETs
TL;DR: In this article, the degradation monitoring of silicon carbide mosfet s and an early warning method to detect aging is proposed, which can be integrated to smart gate drivers or directly to power converters.