Journal ArticleDOI
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Fei Yang,Enes Ugur,Bilal Akin +2 more
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TLDR
In this article, the authors investigated the aging's impacts on various temperature sensitive electrical parameters (TSEPs) in SiC mosfets and found that the package degradation's impact on TSEPs was more significant than the gate oxide instability.Abstract:
The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide (SiC) mosfets junction temperature measurement for over-temperature protection and condition monitoring. However, the device aging can affect the TSEPs and thus leads to false ${\boldsymbol{T}}_{\boldsymbol{j}}$ measurement. In this article, the aging's impacts on various TSEPs are comprehensively investigated. Specifically, utilizing the dc power cycling test, both the gate oxide instability and package degradation are considered. Then the commercial devices with different structures are aged, and their temperature-dependent static and switching characteristics are evaluated at different aging cycles. Both the positive gate bias-induced threshold voltage shift and package degradation are observed, and their impacts on each TSEP are evaluated independently. Based on the evaluation results at various operating conditions, the temperature measurement errors due to different aging mechanisms are well summarized for each TSEP. From the dc power cycling test result, the package degradation's impact on TSEPs is found to be more significant than the gate oxide instability. It is pointed out that the aging's effect on TSEPs is an important factor that needs to be considered for accurate ${\boldsymbol{T}}_{\boldsymbol{j}}$ measurement in SiC mosfets .read more
Citations
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Journal ArticleDOI
Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
TL;DR: In this paper, the authors provide a comprehensive overview, address existing challenges, and unfold new research opportunities regarding the SiC power converter real-time lifetime prediction and extension, including component-level failure modes and mechanisms.
On-line monitoring of the mosfet device junction temperature by computation of the threshold voltage
TL;DR: In this article, a method for an on-line junction temperature measurement is introduced, which allows the calibration of a real-time thermal model of a power MOSFET.
Journal ArticleDOI
Turn- on Delay Based Real-Time Junction Temperature Measurement for SiC MOSFETs With Aging Compensation
TL;DR: It is shown that the proposed circuit provides an accurate real-time online junction temperature measurement for SiC MOSFETs, which can be deployed to improve the power converters’ reliability.
Journal ArticleDOI
Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances
TL;DR: In this paper, two temperature-independent precursors (Miller capacitance and gate-source capacitance changes) are proposed for gate-oxide degradation monitoring of SiC MOSFET s.
Journal ArticleDOI
Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs
TL;DR: In this paper, a method for evaluating the implications of threshold voltage (VTH ) drift from gate voltage stress in SiC MOSFETs is presented by exploiting the Miller coupling between two devices in the same phase leg, the technique uses the shoot-through charge from parasitic turn-on to characterize the impact of bias temperature instability (BTI)-induced VTH shift.
References
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Toward Reliable Power Electronics: Challenges, Design Tools, and Opportunities
TL;DR: The performance of power electronic systems, especially in terms of efficiency and power density, has continuously improved by the intensive research and advancements in circuit topologies, control schemes, semiconductors, passive components, digital signal processors, and system integration technologies.
Journal ArticleDOI
Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review
TL;DR: In this article, a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices is presented, including voltage under low current levels, threshold voltage, voltage under high current level, gate-emitter voltage, saturation current, and switching times.
Journal ArticleDOI
Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
TL;DR: In this article, a review of the basic mechanisms affecting the stability of the threshold voltage in response to bias-temperature stress is presented in terms of the charging and activation of near-interfacial oxide traps.
Proceedings ArticleDOI
Temperature measurements of semiconductor devices - a review
TL;DR: There are several methods for measuring the temperature of an operating semiconductor device as discussed by the authors, which can be broadly placed into three generic categories: electrical, optical, and physically contacting. But, as discussed in Section 2.1, some of the advantages and disadvantages as well as the spatial, time, and temperature resolution are also provided.
Journal ArticleDOI
A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications
TL;DR: In this paper, a high-temperature, high-frequency, wire-bond-based multichip phase-leg module was designed, fabricated, and fully tested using paralleled Silicon Carbide (SiC) MOSFETs.