E
Eric Scott Moyer
Researcher at Dow Corning
Publications - 36
Citations - 329
Eric Scott Moyer is an academic researcher from Dow Corning. The author has contributed to research in topics: Silsesquioxane & Dielectric. The author has an hindex of 10, co-authored 36 publications receiving 329 citations.
Papers
More filters
Patent
A method of forming coatings
TL;DR: In this article, the authors proposed a method for applying low dielectric constant coatings on electronic devices, which is particularly useful for applications on electronic components such as circuit boards.
Patent
Wafer Bonding System and Method for Bonding and Debonding Thereof
TL;DR: In this article, a method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations.
Patent
Method for forming anti-reflective coating
TL;DR: Silsesquioxane resins useful in forming the antireflective coating having the formula (PhSiO(3-x)/2(OH)x)m HSiO( 3-x/2(OM)x),n(MeSiO (3-ex)/2 (OH)X)p(RSiO ( 3-ox)/2.OH)q where Ph is a phenyl group, Me is a methyl group, R is selected from ester groups and polyether groups, x has a value of 0, 1 or
Patent
Silicone resins and process for synthesis
Gregory Becker,II Leslie Earl Carpenter,Russell Keith King,Tetsuyuki Michino,Eric Scott Moyer +4 more
TL;DR: In this article, a method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins was proposed, which comprises adding at least one of hydridotrichlorosilane, tetrachloro-silane or organotrich-lorosilicane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of alkylsulph
Patent
Siloxane resin-based anti-reflective coating composition having high wet etch rate
Bianxiao Zhong,Eric Scott Moyer +1 more
TL;DR: In this paper, a siloxane resin composition with the formula (Hsi03/2)a.,SiO4/2b,SiO3/2c,SiX4/1d, where each X is independently -0-, -OH, or -0-(CH2)m-Zn, wherein each m is independently an integer from I to about 5, Z is an 5 aromatic moiety, and each n is independently a integer from 1 to about 6, and a + b + c + d = 1.