A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Method of depositing a low k dielectric with organo silane

Electrical isolation in non-volatile memory is provided by air gaps formed using sacrificial films of differing etch rates. A high etch rate material is formed in an isolation trench. Flowable chemical vapor deposition processes are used to form high etch rate films, and curing is performed to increase their etch rate. A low etch material is formed over the high etch rate material and provides a controlled etch back between charge storage regions in a row direction. A discrete low etch rate layer can be formed or the high etch rate material can be oxidized to form an upper region with a lower etch rate. A controlled etch back enables formation of a wrap-around dielectric and control gate structure in the row direction with minimized variability in the dimensions of the structures. At least a portion of the high etch rate material is removed to form air gaps for isolation.

Air gap isolation in non-volatile memory using sacrificial films

A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially inbetween metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film (7, 8) is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion (8) of the dielectric layer and a relatively less hardened underlying portion (7) of the dielectric layer.

Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation

The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film 116 , a TiN film 115 and a pad metal film 117 are formed in this sequence on the upper surface of a Cu interconnect 112 . The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer 113 , and thereafter a polyimide film 118 is formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film 117 , and finally a solder ball 120 is joined thereto.

Semiconductor device and method for manufacturing same

An organohydridosiloxane polymer having a cage conformation, at least approximately 40 Mole percent carbon containing substituents and a dielectric constant of less than about 2.7 is presented. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure with essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

Organohydridosiloxane resins with high organic content

A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer (10) and an adhesive (15) to different wafers (5, 20); bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl - functionalized polysiloxane oligomeric resin, a Si-H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane -based resin or a thermoplastic resin.

Wafer Bonding System and Method for Bonding and Debonding Thereof

This invention pertains to a method of producing low dielectric coatings from hydrogen silsesquioxane resin. The method for producing the coatings comprises applying a film of hydrogen silsesquioxane resin onto a substrate and thereafter curing the film by first heating at a temperature of about 325° C. to 350° C. thereafter heating at a temperature of about 400° C. to 450° C. until the normalized SiH bond density is 50 to 80%. This two step curing process produces films having lower dielectric constant and improved mechanical properties.

Method for producing low dielectric coatings from hydrogen silsequioxane resin

This invention pertains to a method for producing thermally stable multi-layer coatings and the coatings produced therefrom. The multi-layer coating is comprised of a first coating produced from hydrogen silsesquioxane having a thickness of 1.25 to 2.25 μm and a second coating comprising silicon dioxide having a thickness of at least 100 nm. The method for producing the first coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of 150° C. to 500° C. for a sufficient period of time to produce a crack-free coating having a thickness of 1.25 μm to 2.25 μm. The second coating is produced by depositing, preferably by PECVD, silicon dioxide over the first coating at a thickness of at least 100 nm.

Thermally stable dielectric coatings

This invention pertains to a method for producing an insoluble coating on a substrate by curing a composition comprising hydrogen silsesquioxane at a temperature of 375° C. or less for a time sufficient to produce a coating having >80% SiH. It has been found that when the hydrogen silsesquioxane resin is cured at a temperature of 375° C. or less that that the insoluble SiH containing coating shows improved film stress.

Method of producing coatings on electronic substrates

This invention pertains to a method for producing a ceramic-like coating on a substrate by curing a composition comprising hydrogen silsesquioxane resin in an inert atmosphere containing less than 100 ppm of oxygen at a temperature of 375°C. or greater. It has been found that when the hydrogen silsesquioxane resin is heated in an inert atmosphere containing less than 100 ppm of oxygen at a temperature of 375°C. or greater that the dielectric constant of the ceramic-like coating is reduced.

Jeffrey Nicholas Bremmer

Papers

Wafer Bonding System and Method for Bonding and Debonding Thereof

Method for producing low dielectric coatings from hydrogen silsequioxane resin

Thermally stable dielectric coatings

Method of producing coatings on electronic substrates

Method of producing low dielectric ceramic-like materials