Multi-stack wafer bonding is one of the most promising fabrication techniques for creating three-dimensional (3D) microstructures. However, there are several bonding issues that have to be faced and overcome to build multilayered structures successfully. Among these are: (1) chemical residues on surfaces to be bonded originating from the fabrication processes prior to bonding; (2) increased stiffness due to multiple bonded wafers and/or thick wafers; (3) bonding tool effects; (4) defect propagation to other wafer-levels after high-temperature annealing cycles. The problems and the solutions presented here are readily applicable to any microelectromechanical systems project involving the fabrication of multi-stack structures of two or more wafers containing intricate geometries and large etched areas.

Multi-stack silicon-direct wafer bonding for 3D MEMS manufacturing

[Problem] To provide a negative photosensitive siloxane compound which can be inorganically developed, and a method for forming a cured film using the compound. [Solution] A negative photosensitive siloxane composition comprising: polysiloxane; a silicon-containing compound having a pKa of 2.0-15.7; a photo-polymerization initiator; and a solvent. A cured film can be obtained by applying the composition to the top of a substrate, exposing same, developing same by means of an inorganic developing solution, and heating same.

Positive photosensitive siloxane composition

A method of preparing a silicone resin film, the method comprising coating a release liner with a nanomaterial-filled silicone composition comprising a hydrosilylation-curable silicone composition and a carbon nanomaterial, and heating the coated release liner at a temperature sufficient to cure the silicone resin; a silicone resin film prepared according to the preceding method; and a nanomaterial-filled silicone composition.

Silicone Resin Film, Method of Preparing Same, and Nanomaterial-Filled Silicone Composition

The present invention is directed to a method of providing a thermally curable coating composition for to provide positive photoresists layers, underlayers for multiple layer resists, antireflective coatings, bottom layer antireflective coatins, dielectric layers, photoresist layers, hard mask etch stops, in the manufacture of integrated circuits More particularly, the present invention is directed to a method of using a thermally activable latent acid or a thermal acid generator, a N-benzylpyridinium or N-benzylanilinium salt of a strong acid, as a catalyst in a polymerizable composition suitable for preparing such coatings and layers The present invention is also directed to novel compositions comprising benzylpyridinium and benzylanilinium salts of a strong acid, such as sulfonic acid or disulfonic acid as thermal acid generators

Method of producing a crosslinked coating in the manufacture of integrated circuits

Silsesquioxane resins useful in forming the antireflective coating having the formula (PhSiO(3-x)/2(OH)x)m HSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q where Ph is a phenyl group, Me is a methyl group, R is selected from ester groups and polyether groups, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, q has a value of 0.01 to 0.30 and m + n + p + q ≈1.

Method for forming anti-reflective coating

A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer (10) and an adhesive (15) to different wafers (5, 20); bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl - functionalized polysiloxane oligomeric resin, a Si-H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane -based resin or a thermoplastic resin.

Wafer Bonding System and Method for Bonding and Debonding Thereof

This invention relates to acrylic functional resin compositions. More particularly, this invention relates to Poly [organ-co-(meth)acryloxyorgano]silsequioxane resins that are curable upon exposure to ultraviolet radiation with photo initiator or upon heating with or without a free radical generator. The resin compositions have high storage stability at room temperature and produces films that are useful as planarization layer, interlayer dielectric, passivation layer, gas permeable layer, negative photoresist, antireflective coating, conformal coating and IC packaging.

Radiation sensitive silicone resin composition

We report the development of a bi-layer spin on temporary bonding solution (TBS) which eliminates the need for specialized equipment for wafer pretreatment to enable bonding or wafer post treatment for debonding. Thus it greatly increases the throughput of the temporary bonding/debonding process. It also provides a total thickness variation (TTV) of less than 1 μm for spin coated films on both 200 mm and 300 mm wafers which enable the TTV of 300 mm bonded pairs to be 2-3 μm for bumped wafers using 70 and 100 μm thick adhesive films after backgrinding for an unoptimized bonding process. Furthermore, we have demonstrated the chemical and thermal stability of both the material and the bonded pair by exposing the bonded wafer pair to common chemicals (phosphoric acid, nitric acid, organic solvents etc.) and temperature conditions (up to 300 C) used in the TSV process. Additionally, the time taken for the entire spin coat-bond-debond process was less than 15 minutes with room for further improvement. Based on the current results, it is expected that the current bi-layer based temporary bonding solution has the potential to play an important role in enabling the high volume manufacturing of 2.5D/3D IC stacking.

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Low cost, room temperature debondable spin-on temporary bonding solution: A key enabler for 2.5D/3D IC packaging

Silicone resins comprising 5 to 50 mole% of (PhSiO3-x)/2(OH)x) units and 50 to 95 mole% (HSiO(3-x)/2(OH)x), where Ph is a phenyl group, x has a value of 0, 1 or 2 and wherein the cured silicone resin has a critical surface free energy of 30 dynes/cm or higher These resins are useful as etch stop layers for organic dielectric materials having a critical surface free energy of 40 dynes/cm or higher

Craig Rollin Yeakle

Papers

Wafer Bonding System and Method for Bonding and Debonding Thereof

Method for forming anti-reflective coating

Radiation sensitive silicone resin composition

Low cost, room temperature debondable spin-on temporary bonding solution: A key enabler for 2.5D/3D IC packaging

Etch-stop resins