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Showing papers by "Errol Antonio C. Sanchez published in 2018"


Patent
25 Jan 2018
TL;DR: In this article, the authors describe a heat modulator assembly for use in a processing chamber, which consists of a heat-modulator housing and a plurality of heat modulators.
Abstract: Embodiments disclosed herein generally related to a processing chamber, and more specifically a heat modulator assembly for use in a processing chamber The heat modulator assembly includes a heat modulator housing and a plurality of heat modulators The heat modulator housing includes a housing member defining a housing plane, a sidewall, and an annular extension The sidewall extends perpendicular to the housing plane The annular extension extends outward from the sidewall The plurality of heat modulators is positioned in the housing member

Patent
18 Jan 2018
TL;DR: In this article, the authors present methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed silicon antimony layer.
Abstract: The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed silicon antimony layer. The method includes heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon, and exposing a surface of the substrate to a gas mixture comprising a silicon-containing precursor and an antimony-containing precursor to form a silicon antimony alloy having an antimony concentration of 5×1020 to 5×1021 atoms per cubic centimeter or greater on the surface.