E
Erwin Jacobs
Researcher at Siemens
Publications - 37
Citations - 567
Erwin Jacobs is an academic researcher from Siemens. The author has contributed to research in topics: Field-effect transistor & Transistor. The author has an hindex of 11, co-authored 37 publications receiving 567 citations.
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Patent
Process for producing an integrated multi-layer insulator memory cell
TL;DR: In this paper, an integrated multi-layer insulator memory cell is produced via silicon-gate technology, with self-adjusting, overlapping polysilicon contact wherein a gate oxide of a peripheral transistor is produced after the application of a multilayer insulating layer comprised of a storage layer and a "blocking" layer.
Patent
Method of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantation
TL;DR: In this paper, a method for manufacturing MNOS memory transistors with very short channel lengths in silicon gate technology is presented, in which the edges of gate electrodes, with reference to the plane of the substrate surface, lie perpendicularly and self-adjusting over the edge of the source and drain zones, whereby the source/ drain zones generated in the substrate are manufactured by means of ion implantation upon employment of the gate electrodes as the implantation mask.
Patent
Forming retrograde twin wells by outdiffusion of impurity ions in epitaxial layer followed by CMOS device processing
TL;DR: In this paper, a method for the manufacture of LSI complementary MOS field effect transistor circuits was proposed to increase the latch-up hardness of the n-channel and p-channel field effect transistors while retaining good transistor properties.
Patent
Process for production of integrated mos circuits with and without mnos memory transistors in silicon-gate technology
TL;DR: In this article, a self-aligned overlapped contact with oversized contact holes is proposed to avoid under-etching of the polysilicon during contact hole etching, which allows a substantial increase in the packing and integra-tion density of the so-produced circuits.
Patent
Process for producing adjacent tubs implanted with dopant ions in the manufacture of LSI complementary MOS field effect transistors
TL;DR: In this article, a method for manufacturing adjacent tubs implanted with dopant material ions in the manufacture of LSI complementary MOS field effect transistor circuits (CMOS circuits), and also provides a method sequence for a CMOS process adapted to tub manufacture.