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Etienne Philippot

Researcher at University of Montpellier

Publications -  84
Citations -  1190

Etienne Philippot is an academic researcher from University of Montpellier. The author has contributed to research in topics: Berlinite & Gallium phosphate. The author has an hindex of 20, co-authored 84 publications receiving 1132 citations. Previous affiliations of Etienne Philippot include Centre national de la recherche scientifique & Centre national d'études des télécommunications.

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A Neutron Diffraction Study of the Thermal Stability of the α-Quartz-Type Structure in Germanium Dioxide

TL;DR: The structure of the α-quartz-type form of germanium dioxide was refined at room temperature and up to 1344 K by the Rietveld method using time-of-flight neutron powder diffraction data as mentioned in this paper.
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A quartz-like material : gallium phosphate (GaPO4) ; crystal growth and characterization

TL;DR: In this paper, the authors investigated GaPO4 crystal growth in sulphuric and phosphoric acid media through the slow heating and vertical reverse temperature gradient methods and found that the growth rate Vx is always much greater than the two other ones, Vz and Vy.
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Etude comparée à diverses températures (173, 293 et 373°K) des structures de type quartz α des phases MIIIXVO4 (MIII = Al, Ga et XV = P, As)

TL;DR: The crystal structures of quartz α type M III X V O 4 (M = Al, Ga; X = P, As) were refined at 173, 293, and 373°K in the P 3 1 21 space group as discussed by the authors.
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Mixed Glass Former Effect in the System 0.3Li2S−0.7[(1−x)SiS2−xGeS2]: A Structural Explanation

TL;DR: In this paper, a mixed glass former effect has been observed in the glassy system 0.3Li{sub 2}S{minus}0.64, where high conducting glasses belonging to the central composition region, i.e., 0.50{le} x {le} 0.64 < 0.
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Neutron and X-Ray Structure Refinements between 15 and 1073 K of Piezoelectric Gallium Arsenate, GaAsO4: Temperature and Pressure Behavior Compared with Other α-Quartz Materials

TL;DR: In this article, a complete structural reinvestigation of gallium arsenate was carried out between 15 and 1073 K by both neutron and X-ray diffraction, which led to experimental bond values in agreement with those predicted, i.e., close to 1.67 and 1.82 A.