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Eungsun Byon

Publications -  10
Citations -  203

Eungsun Byon is an academic researcher. The author has contributed to research in topics: Thin film & Evaporation (deposition). The author has an hindex of 4, co-authored 10 publications receiving 185 citations.

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Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering

TL;DR: In this article, thermoelectric bismuth telluride thin films were prepared on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering.
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Characterization of interface of c-BN film deposited on silicon(100) substrate

TL;DR: In this paper, the interfacial microstructure of cubic boron nitride (c-BN) film deposited on a single silicon substrate using magnetically enhanced active reaction evaporation (ME-ARE) has been investigated through thinning methods, in which X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) absorption spectroscope were used for compositional and micro-structure analysis.
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Electrochemical properties of boron-carbon-nitride films formed by magnetron sputtering

TL;DR: In this article, the electrochemical behavior of B 1.0 thin film was investigated in acidic, neutral and alkaline solutions, and it was shown that the anodic current density of the film is directly proportional to the dissolution rate at potentials higher than 0.1.
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Corrosion behavior of boron-carbon-nitride films grown by magnetron sputtering

TL;DR: The corrosion behavior of BCN thin films in aqueous solution was investigated in this paper, where BCN samples with different carbon content were immersed in 1 M NaOH solutions to investigate the effect of chemical composition on corrosion resistance.
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A study of interface and adhesion of c-BN film on Si(1 0 0) modified by nitrogen plasma based ion implantation technique

TL;DR: In this article, the nitrogen ion implanted c-BN films were analyzed using FTIR, scratch test, and XPS to investigate the change of structure, adhesion strength, and interfacial mixing between the initial turbostratic BN (t-BN) layer and substrate caused by nitrogen ion implantation.