E
Evangelos Eleftheriou
Researcher at IBM
Publications - 388
Citations - 18468
Evangelos Eleftheriou is an academic researcher from IBM. The author has contributed to research in topics: Signal & Communication channel. The author has an hindex of 55, co-authored 380 publications receiving 15777 citations. Previous affiliations of Evangelos Eleftheriou include GlobalFoundries & Hitachi.
Papers
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Patent
Rewrite-efficient ecc/interleaving for multi-track recording on magnetic tape
Thomas Mittelholzer,Roy D. Cideciyan,Evangelos Eleftheriou,Keisuke Tanaka,Hisato Matsuo,Paul J. Seger +5 more
TL;DR: In this paper, a received data set is segmented into unencoded subdata sets, each comprising an array having K 2 rows and K 1 columns, and the parity bytes are appended to the ends of the row and column, respectively, to form encoded C1 and C2 codewords, respectively.
Proceedings ArticleDOI
Inherent stochasticity in phase-change memory devices
TL;DR: The inherent stochasticity associated with two key attributes of phase-change memory devices, namely, threshold switching and memory switching are investigated and a true random number generator is presented.
Patent
Method and system for encoding data for high performance error control
Roy D. Cideciyan,Jonathan Darrel Coker,Evangelos Eleftheriou,Richard Leo Galbraith,Todd Carter Truax +4 more
TL;DR: In this article, a method and apparatus for encoding a plurality of successive m-bit binary data words to produce a plurality for supply to a magnetic recording channel was proposed, where m-bits are partitioned into blocks of bits, and at least one block of bits in each mbit binary coded word is encoded in accordance with a finite-state coding scheme.
Journal ArticleDOI
Nanopositioning for storage applications
TL;DR: In this article, a review of control-related research in nanopositioning for two extreme cases of data-storage systems, namely, in probe and in tape storage, is presented.
Patent
Wear-level of cells/pages/sub-pages/blocks of a memory
TL;DR: In this paper, a method for wear-leveling cells or pages or sub-pages or blocks of a memory such as a flash memory is proposed, where the number of times a given type of binary data is to be written in the received chunk of data is calculated.