Zinc oxide nanoparticles: Synthesis, antiseptic activity and toxicity mechanism.

This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation. The article is divided in two parts within Part I. 1) We analyze how the choice of the measurement and analysis parameters (such as the voltage levels used to induce the trapping phenomena and monitor the current transients, the duration of the filling pulses, and the method used for the extrapolation of the time constants of the capture/emission processes) can influence the results of the drain current transient investigation and can provide information on the location of the trap levels responsible for current collapse. 2) We present a database of defects described in more than 60 papers on GaN technology, which can be used to extract information on the nature and origin of the trap levels responsible for current collapse in AlGaN/GaN HEMTs. Within Part II, we investigate how self-heating can modify the results of drain current transient measurements on the basis of combined experimental activity and device simulation.

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Since its discovery1, early in 1928, the scattering of light with altered frequency has been investigated in many crystals, and much valuable information has been accumulated. The significance of the results and their relation to theories of solid state are clearly matters of great interest.

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Scattering of light in crystals

Magnesium Oxide (MgO).- Zincblende Magnesium Sulphide (?-MgS).- Zincblende Magnesium Selenide (?-MgSe).- Zincblende Magnesium Telluride (?-MgTe).- Zinc Oxide (ZnO).- Wurtzite Zinc Sulphide (?-ZnS).- Cubic Zinc Sulphide (?-ZnS).- Zinc Selenide (ZnSe).- Zinc Telluride (ZnTe).- Cubic Cadmium Sulphide (c-CdS).- Wurtzite Cadmium Sulphide (w-CdS).- Cubic Cadmium Selenide (c-CdSe).- Wurtzite Cadmium Selenide (w-CdSe).- Cadmium Telluride (CdTe).- Cubic Mercury Sulphide (?-HgS).- Mercury Selenide (HgSe).- Mercury Telluride (HgTe).

Handbook on physical properties of semiconductors

Life cycle assessment (LCA) is a comprehensive method used to investigate the environmental impacts and energy use of a product throughout its entire life cycle. For solar photovoltaic (PV) technologies, LCA studies need to be conducted to address environmental and energy issues and foster the development of PV technologies in a sustainable manner. This paper reviews and analyzes LCA studies on solar PV technologies, such as silicon, thin film, dye-sensitized solar cell, perovskite solar cell, and quantum dot-sensitized solar cell. The PV life cycle assumes a cradle-to-grave mechanism, starting from the extraction of raw materials until the disposal or recycling of the solar PV. Three impact assessment methods in LCA were reviewed and summarized, namely, cumulative energy demand (CED), energy payback time (EPBT), and GHG emission rate, based on data and information published in the literature. LCA results show that mono-crystalline silicon PV technology has the highest energy consumption, longest EPBT, and highest greenhouse gas emissions rate compared with other solar PV technologies.

Prospects of life cycle assessment of renewable energy from solar photovoltaic technologies: A review

New efficient solar cell structures based on zinc oxide nanorods

Photovoltaic (PV) technologies which play a role in PV market are divided into basic two types: wafer-based (1st generation PV) and thin-film cell (2nd generation PV). To the first category belong mainly crystalline silicon (c-Si) cells (both mono- and multi-crystalline). In 2015 around 90% of the solar market belonged to crystalline silicon. To the 2nd generation solar cells belongs thin film amorphous silicon (a-Si) or a combination of amorphous and microcrystalline silicon (a-Si/μc-Si), compound semiconductor cadmium telluride (CdTe), compound semiconductor made of copper, indium, gallium and selenium (CIS or CIGS) and III–V materials. The PV market for thin film technology is dominated by CdTe and CIGS solar cells. Thin film solar cells’ share for all thin film technologies was only 10% in 2015. New emerging technologies, called 3rd generation solar cells, remain the subject of extensive R&D studies but have not been used in the PV market, so far. In this review the best laboratory 1st and 2nd generation solar cells that were recently achieved are described. The scheme of the layer structure and energy band diagrams will be analyzed in order to explain the boost of their efficiency with reference to the earlier standard designs.

Top PV market solar cells 2016

Improved efficiency of n-ZnO/p-Si based photovoltaic cells by band offset engineering

ZnO/Si heterojunction solar cell fabricated by atomic layer deposition and hydrothermal methods

In the present study, the electrical and optical properties of deep defects in p-i-n GaN junction and AlGaN/GaN heterojunction are investigated by means of the deep level transient spectroscopy (DLTS), Laplace DLTS, and electroluminescence (EL) techniques. We demonstrate that in both structures the yellow luminescence (YL) is a dominant band in the EL spectra recorded at room temperature. We correlate the YL band with the minority DLTS peaks observed at about 370 K. A gallium vacancy-related defect seems to be a probable candidate as to the origin of the defect. Another dominant majority peak observed in the DLTS studies was concluded to be linked with a donor-like defect in the upper half of the bandgap. The origin of the defect is discussed.

Ewa Placzek-Popko

Papers

New efficient solar cell structures based on zinc oxide nanorods

Top PV market solar cells 2016

Improved efficiency of n-ZnO/p-Si based photovoltaic cells by band offset engineering

ZnO/Si heterojunction solar cell fabricated by atomic layer deposition and hydrothermal methods

A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN