Sylwia Gieraltowska

TL;DR: In this article, the electrical properties of ZnO-based p-n and Schottky junctions are discussed and a rectification ratio high enough to fulfill requirements of 3D memories is demonstrated.

TL;DR: In this paper, a low temperature hydrothermal method was used to grow zinc oxide nanorods (ZnONR) on a p-type silicon surface, where the thickness of the ZnO layer was optimized to increase the light-trapping effect and thus the photovoltaic response.

TL;DR: The atomic layer deposition (ALD) technique has great potential for widespread use in the production of ZnO films for applications in electronic, photovoltaic (PV), and optoelectronic devices as discussed by the authors.

TL;DR: In this article, a transparent transistor was obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60°C-100°C) using ALD technology.

TL;DR: In this paper, the authors investigate transport in gated microsctructures containing a band-inverted HgTe/HgCd${}_{03}$Cd{}_{07}$Te quantum well and show that the topological protection length is much shorter than the channel length.