F. A. Kish

TL;DR: In this article, a transparent-substrate (TS) (AlxGa1−x) 0.5In0.5P/GaP light-emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560-630 nm) spectral regime is presented.

TL;DR: In this article, the authors describe the development of advanced metalorganic chemical vapor deposition crystal growth techniques, which have facilitated the high-quality growth of this quaternary alloy as well as the implementation of complex device designs, and further improvements in these techniques are expected to make efficient, high-power LEDs even more competitive with conventional lamp technology, thus enhancing the position of LED's in many applications as a preferred lighting source.

TL;DR: In this article, low-resistance Ohmic conduction across interfaces formed by high-temperature compound semiconductor wafer bonding is demonstrated. But the achievement of these properties is critically dependent upon the crystallographic alignment of the bonded wafer surfaces, irrespective of the lattice mismatch between the surfaces.

TL;DR: In this article, the stability of AlAs−GaAs heterostructures against atmospheric (destructive) hydrolysis using the native oxide that can be formed (N2+H2O, 400 °C, 3 h) on the AlAs layer is presented.

TL;DR: In this paper, a planar index-guided laser diode with a relatively thick (∼0.4 μm) native oxide employed to define the lateral optical waveguide (transverse to the laser stripe) is demonstrated.