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F.A. Pulgarín-Agudelo

Researcher at Instituto Politécnico Nacional

Publications -  18
Citations -  526

F.A. Pulgarín-Agudelo is an academic researcher from Instituto Politécnico Nacional. The author has contributed to research in topics: Thin film & Solar cell. The author has an hindex of 9, co-authored 18 publications receiving 462 citations. Previous affiliations of F.A. Pulgarín-Agudelo include National Autonomous University of Mexico.

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Journal ArticleDOI

Development of a selective chemical etch to improve the conversion efficiency of Zn-rich Cu2ZnSnS4 solar cells.

TL;DR: A selective chemical etching process based on the use of hydrochloric acid solutions to remove Zn-rich secondary phases from the CZTS film surface, which are partly responsible for the deterioration of the series resistance of the cells and, as a consequence, the conversion efficiency.
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Open-circuit voltage enhancement in CdS/Cu2ZnSnSe4-based thin film solar cells: A metal–insulator–semiconductor (MIS) performance

TL;DR: In this article, a theoretical model for CZTSe solar cell with record efficiency is presented, where trap-assisted tunneling recombination is introduced as the major hurdle to boost V oc values.
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Optimization of physical properties of spray-deposited Cu2ZnSnS4 thin films for solar cell applications

TL;DR: In this article, a spray pyrolysis technique has been identified as a low-cost and versatile technique which could reduce cost per watt peak of panels, and the sprayed-CZTS thin films are fabricated at substrate temperature in the range of 340-420°C.
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Ultra-thin CdS for highly performing chalcogenides thin film based solar cells

TL;DR: In this article, a metal-insulator-semiconductor (MIS) type device was proposed to explain the observed experimental behavior based in indirect optoelectronic characterization of the layers and devices.
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Determination of minority carrier diffusion length of sprayed-Cu 2 ZnSnS 4 thin films

TL;DR: In this paper, the minority carrier diffusion length (Ln) was calculated for spray-deposited CZTS layers using external quantum efficiency measurements in conjunction with optical absorption coefficient versus wavelength measurements.