Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

Horizon 2020 Project “Design for Resource and Energy efficiency in CerAMic Kilns- DREAM Project (Grant No: 723641), Horizon 2020 Industrial THERMal energy recovery conversion and management (Grant No:680599) and ESPRC (Grant No: EP/P004636/1)

https://bura.brunel.ac.uk/bitstream/2438/16137/3/Fulltext.pdf

Waste Heat Recovery Technologies and Applications

Harold J Hovel. R K Willardson and Albert C Beer (eds) London and New York: Academic 1976 pp xxiv + 254 price £7.55 Even the most radical among us resent certain changes. Those who have become accustomed to the elegant presentation of the series Semiconductors and Semimetals will feel a frisson of shock when they open the latest addition.

http://iopscience.iop.org/article/10.1088/0031-9112/27/11/047/pdf

Semiconductors and Semimetals Vol 11: Solar Cells

We review the fundamental band gaps of wurtzite InN and group III nitride ternary alloys in the light of the recent discovery of the narrow band gap of InN. The results on the composition, temperature and hydrostatic pressure dependence of the band gaps of these alloys are summarized and discussed. The role of the Burstein–Moss shift for the accurate determination of the band gap is emphasized. The impact of the narrow band gap of InN on new device applications of group III nitrides is briefly discussed.

Band Gaps of InN and Group III Nitride Alloys

Numerical investigation of key parameters of the porous media combustion based Micro-Thermophotovoltaic system

The electrical and optical characteristics of an n-type gallium nitride (GaN)-based Schottky barrier ultraviolet (UV) detector, where a platinum (Pt) metal layer forms the anode contact, have been evaluated by means of detailed numerical simulations considering a wide range of incident light intensities. By modeling the GaN physical properties, the detector current density–voltage characteristics and spectral responsivity for different (forward and reverse) bias voltages and temperatures are presented, assuming incident optical power ranging from 0.001 W cm−2 to 1 W cm−2. The effect of defect states in the GaN substrate is also investigated. The results show that, at room temperature and under reverse bias voltage of −300 V, the dark current density is in the limit of 2.18 × 10−19 A cm−2. On illumination by a 0.36-μm UV uniform beam with intensity of 1 W cm−2, the photocurrent significantly increased to 2.33 A cm−2 and the detector spectral responsivity reached a maximum value of 0.2 A W−1 at zero bias voltage. Deep acceptor trap states and high temperature strongly affected the spectral responsivity curve in the considered 0.2 μm to 0.4 μm UV spectral range.

Performance Analysis of a Pt/n-GaN Schottky Barrier UV Detector

In this paper, using a numerical simulator, we investigated the current–voltage characteristics of a Pt/n-GaN thin Schottky diode on the basis of the thermionic emission (TE) theory in the 300 to 500 K temperature range. During the simulations, the effect of different defect states within the n-GaN bulk with different densities and spatial locations is considered. The results show that the diode ideality factor and the threshold voltage decrease with increasing temperature, while at the same time, the zero-bias Schottky barrier height (Φb0) extracted from the forward current density–voltage (J–V) characteristics increases. The observed behaviors of the ideality factor and zero-bias barrier height are analyzed on the basis of spatial barrier height inhomogeneities at the Pt/GaN interface by assuming a Gaussian distribution (GD). The plot of apparent barrier height (Φb,App) as a function of q/2kT gives a straight line, where the mean zero-bias barrier height () and the standard deviation (σ0) are 1.48 eV and 0.047 V, respectively. The plot of the modified activation energy against q/kT gives an almost the same value of and an effective Richardson constant A* of 28.22 A cm−2 K−2, which is very close to the theoretical value for n-type GaN/Pt contacts. As expected, the presence of defect states with different trap energy levels has a noticeable impact on the device electrical characteristics.

http://iopscience.iop.org/article/10.7567/JJAP.56.094301/pdf

Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode

Theoretical design and performance of InxGa1-xN single junction solar cell

Numerical simulation study of a high efficient AlGaN-based ultraviolet photodetector

An analytical model is used to describe the electrical characteristics of a dual-junction tandem solar cell performing with a conversion efficiency of 32.56% under air mass 1.5 global (AM1.5G) spectrum. The tandem structure consists of a thin heterojunction top cell made of indium gallium phosphide (InGaP) on gallium arsenide (GaAs), mechanically stacked on a relatively thick germanium (Ge) substrate, which acts as bottom cell. In order to obtain the best performance of such a structure, we simulate for both the upper and lower sub-cell the current density–voltage, power density–voltage, and spectral response behaviors, taking into account the doping-dependent transport parameters and a wide range of minority carrier surface recombination velocities. For the proposed tandem cell, our calculations predict optimal photovoltaic parameters, namely the short-circuit current density (Jsc), open-circuit voltage (Voc), maximum power density (Pmax), and fill factor (FF) are Jsc = 28.25 mA/cm2, Voc = 1.24 V, Pmax = 31.64 mW/cm2, and FF = 89.95%, respectively. The present study could prove useful in supporting the design of high efficiency dual junction structures by investigating the role of different materials and physical parameters.

F. Bouzid

Papers

Performance Analysis of a Pt/n-GaN Schottky Barrier UV Detector

Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode

Theoretical design and performance of InxGa1-xN single junction solar cell

Numerical simulation study of a high efficient AlGaN-based ultraviolet photodetector

Analytical Modeling of Dual-Junction Tandem Solar Cells Based on an InGaP/GaAs Heterojunction Stacked on a Ge Substrate