Radio frequency (RF) energy transfer and harvesting techniques have recently become alternative methods to power the next-generation wireless networks As this emerging technology enables proactive energy replenishment of wireless devices, it is advantageous in supporting applications with quality-of-service requirements In this paper, we present a comprehensive literature review on the research progresses in wireless networks with RF energy harvesting capability, which is referred to as RF energy harvesting networks (RF-EHNs) First, we present an overview of the RF-EHNs including system architecture, RF energy harvesting techniques, and existing applications Then, we present the background in circuit design as well as the state-of-the-art circuitry implementations and review the communication protocols specially designed for RF-EHNs We also explore various key design issues in the development of RF-EHNs according to the network types, ie, single-hop networks, multiantenna networks, relay networks, and cognitive radio networks Finally, we envision some open research directions

Wireless Networks With RF Energy Harvesting: A Contemporary Survey

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

/pdf/silicon-optical-modulators-578o7o6kvr.pdf

Silicon optical modulators

The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates. Today, a silicon chip the size of a fingernail contains nearly 1 billion transistors and has the computing power that only a decade ago would take up an entire room of servers. As the relentless pursuit of Moore's law continues, and Internet-based communication continues to grow, the bandwidth demands needed to feed these devices will continue to increase and push the limits of copper-based signaling technologies. These signaling limitations will necessitate optical-based solutions. However, any optical solution must be based on low-cost technologies if it is to be applied to the mass market. Silicon photonics, mainly based on SOI technology, has recently attracted a great deal of attention. Recent advances and breakthroughs in silicon photonic device performance have shown that silicon can be considered a material onto which one can build optical devices. While significant efforts are needed to improve device performance and commercialize these technologies, progress is moving at a rapid rate. More research in the area of integration, both photonic and electronic, is needed. The future is looking bright. Silicon photonics could provide low-cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects, as well as emerging areas such as optical sensing technology and biomedical applications. The ability to utilize existing CMOS infrastructure and manufacture these silicon photonic devices in the same facilities that today produce electronics could enable low-cost optical devices, and in the future, revolutionize optical communications

http://ieeexplore.ieee.org/iel5/6668/34347/01638290.pdf

Silicon photonics

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Design Of Analog Cmos Integrated Circuits

http://ieeexplore.ieee.org/iel5/5/31047/01444179.pdf

Fundamentals of acoustics

The thermo-optic coefficient ∂n/∂T has been measured from room temperature to 600 K at the wavelength of 1523 nm in three important semiconductors for fiber-optic device fabrication, namely, InP, GaAs, and 6H–SiC. The adopted technique is very simple and is based on the observation of the periodicity of the signal transmitted, at the desired wavelength, by an etalon made of the material under test, when it experiences a temperature variation. The values of ∂n/∂T measured in InP and GaAs at room temperature are in agreement with previously reported ones, but increase with temperature with a weak quadratic dependence. SiC conversely shows a lower thermo-optic coefficient (2.77×10−5 K−1) at 300 K, which, however, doubles for a 300 K temperature increase.

Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm

The thermo-optic coefficient (dn/dT) of crystalline silicon has been critically analyzed in the temperature range 300–600 K, at the fiber optic communication wavelength of 1.5 μm. The temperature dependence has been attributed to the variation of the interband transition energies at some critical points of the silicon band structure. The experimental data have been fitted using single and double oscillator models. In particular, the double oscillator model, which is physically correlated to the silicon band structure, has been exploited to extrapolate the temperature dependence of the interband transition energies at some points (critical points) of the combined density of states. The extracted parameters are in good agreement with the data reported in the literature. Finally, in connection with both of the oscillator approximations, an analysis based on thermodynamic considerations is carried out, and electron–hole formation entropy and specific heat are calculated. The consistency of the obtained result...

Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models

The temperature dependence of the thermo-optic coefficients of lithium niobate has been measured in the temperature range between 320 and 515 K for both wavelengths of 632 and 1523 nm and for ordinary and extraordinary refractive indices. The experimental data, carried out by means of a simple interferometric technique, have been compared with two theoretical models that follow different approaches for treating the thermo-optic effect. The experimental results show good agreement with the theoretical ones.

Temperature dependence of the thermo-optic coefficient of lithium niobate, from 300 to 515 K in the visible and infrared regions

A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the forward voltages appearing on two diodes biased at different constant currents, in a range from 30 °C up to 300 °C, was used for temperature sensing. A high sensitivity of 5.11 mV/°C was measured. This is, to the best of our knowledge, the first experimental result about a proportional-to-absolute-temperature sensor made with SiC diodes, showing both a good degree of linearity and long-term stability performance.

High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

Radio Frequency Energy harvesting is a research topic of increasing interest, related to sustainability, which could become a promising alternative to existing energy resources. The paper will show all the activities addressed to design a wideband system to recover wideband energy from electromagnetic sources present in the environment. The main idea is to develop battery-free wireless sensors able to capture the available energy into the mentioned bandwidth. The flnal goal is to realize self-powered Wireless Networks based on Ultra Lower Power | ULP sensors minimizing the need of dedicated batteries. This last feature is particularly attractive in difierent kind of applications, ranging from military to civil cases. A flrst system prototype is shown and discussed. Conclusion follows.

/pdf/design-considerations-for-radio-frequency-energy-harvesting-1vlsxp8cni.pdf

Francesco G. Della Corte

Papers

Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm

Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models

Temperature dependence of the thermo-optic coefficient of lithium niobate, from 300 to 515 K in the visible and infrared regions

High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

Design considerations for radio frequency energy harvesting devices