F
F. Schafmeister
Researcher at ETH Zurich
Publications - 19
Citations - 989
F. Schafmeister is an academic researcher from ETH Zurich. The author has contributed to research in topics: Three-phase & Sparse matrix. The author has an hindex of 9, co-authored 9 publications receiving 942 citations. Previous affiliations of F. Schafmeister include École Polytechnique Fédérale de Lausanne.
Papers
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Journal ArticleDOI
Novel Three-Phase AC–AC Sparse Matrix Converters
TL;DR: In this article, a three-phase ac-ac sparse matrix converter with no energy storage elements and employing only 15 IGBTs, as opposed to 18 IGBT switches, was proposed.
Proceedings ArticleDOI
Novel three-phase AC-DC-AC sparse matrix converter
TL;DR: In this article, a three-phase AC-DC-AC sparse matrix converter (SMC) with no energy storage elements in the DC link and employing only 15 IGBTs was proposed.
Novel Three-Phase AC-DC-AC Sparse Matrix Converter Part I: Derivation, Basic Principle of Operation, Space Vector Modulation, Dimensioning
TL;DR: In this article, a three-phase AC-DC-AC Sparse Matrix Converter (SMC) with no energy storage elements in the DC link and employing only 15 IGBTs (USMC) was proposed, where the phase displacement of the voltage and current at the input and at the output is limited to ±π/6.
Journal ArticleDOI
Novel Hybrid Modulation Schemes Significantly Extending the Reactive Power Control Range of All Matrix Converter Topologies With Low Computational Effort
F. Schafmeister,Johann W. Kolar +1 more
TL;DR: A novel approach based on indirect modulation, which significantly extends the reactive power control range for three-phase ac-ac matrix converters (MCs) and which is implementable with lowest computational effort, is proposed.
Proceedings ArticleDOI
Analytical calculation of the conduction and switching losses of the conventional matrix converter and the (very) sparse matrix converter
TL;DR: In this paper, analytical expressions with high accuracy are derived for the switching and conduction losses of the CMC, SMC and VSMC's power semiconductors, which can be used to determine the maximal local or average thermal stress and for the thermal design of the power components.