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Fan Zhou

Researcher at Beijing University of Technology

Publications -  18
Citations -  147

Fan Zhou is an academic researcher from Beijing University of Technology. The author has contributed to research in topics: Cathode & Tungsten. The author has an hindex of 6, co-authored 18 publications receiving 101 citations.

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A Study of Scandia-Doped-Impregnated Cathode Fabricated by Spray Drying Method

TL;DR: In this paper, a submicrometer porous matrix cathode composed of tungsten grains with active substances distributing uniformly around these grains has been obtained, and the cathode surface is covered by a Ba-ScO active substance layer with preferable atomic ratios, leading to its good emission property.
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Reduction, sintering and mechanical properties of rhenium-tungsten compounds

TL;DR: In this article, the reduction behavior of the tungsten and rhenium containing precursor powders prepared by spray drying was investigated, showing that the first stage reduction temperature has a significant impact on the microstructure of the W-Re powders.
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Emission and evaporation properties of 75 at.% Re-25 at.% W mixed matrix impregnated cathode

TL;DR: In this paper, the phase, emission performance, surface composition, chemical states and evaporation properties of a 75.00 at.% Re-25.00 W (75Re) mixed matrix impregnated cathode were investigated by several modern analyzers, including XRD, electron emission test device, in situ AES, XPS and Quartz Crystal Oscillation Instrument (QCOI).
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Preparation and surface characteristics of Re3W matrix scandate cathode: An experimental and theoretical study

TL;DR: In this article, Scandia doped Re3W matrix scandate (RS) cathodes are fabricated by using Sc2O3 doped re3W powders that prepared by spray drying method.
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Influence of activation parameters on the thickness of MgO thin film on Ag-3Mg alloy and its secondary electron emission property

TL;DR: In this article, the influence of the thickness of MgO film on the secondary electron yield of the Ag-3wt%Mg alloy was investigated and it was shown that the maximum yield occurs when the penetration depth of primary electrons is 13-18nm less than the thickness.