F
Fang Jia
Researcher at Shenzhen University
Publications - 34
Citations - 344
Fang Jia is an academic researcher from Shenzhen University. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 10, co-authored 34 publications receiving 264 citations.
Papers
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Journal ArticleDOI
Low temperature solution-processed IGZO thin-film transistors
Wangying Xu,Luyao Hu,Chun Zhao,Chun Zhao,Lingjiao Zhang,Deliang Zhu,Peijiang Cao,Wenjun Liu,Shun Han,Xinke Liu,Fang Jia,Zeng Yuxiang,Youming Lu +12 more
TL;DR: In this article, the influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques and the schematic of TFT solution-processed IGZo TFTs mobility with different compositions has been obtained.
Journal ArticleDOI
High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (2¯01) orientation β-Ga2O3 deposited by the PLD method
Xiang He Chen,Shun Han,Youming Lu,Pei Jiang Cao,Wenjun Liu,Y. X. Zeng,Fang Jia,Wangying Xu,Xin K. Liu,De Liang Zhu +9 more
TL;DR: In this article, the effect of oxygen pressure on deposition orientation and the UV response characteristics of the β-Ga2O3 thin film by the Pulse Laser Deposition (PLD) method were studied.
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High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method
Shun Han,S.M. Liu,Youming Lu,Peijiang Cao,Wenjun Liu,Y. X. Zeng,Fang Jia,Xinke Liu,Deliang Zhu +8 more
TL;DR: In this article, a mixed-phase MgZnO-based detector with (200) cubic and (hexagonal) interfaces was proposed to detect solar-blind UV signals.
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Optimization of process parameters for the electrical properties in Ga-doped ZnO thin films prepared by r.f. magnetron sputtering
TL;DR: In this paper, a Ga-doped ZnO (GZO) transparent conductive thin films have been deposited on quartz substrates by r.f. magnetron sputtering and the optimization of four process parameters (i.e., vacuum annealing temperature, power, sputtering pressure and Ar flow rate) based on Taguchi method has been systematically studied in order to obtain the minimum resistivity.
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Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment
Xinke Liu,Jiazhu He,Liu Qiang,Dan Tang,Fang Jia,Wen Jiao,Youming Lu,Wenjie Yu,Deliang Zhu,Wenjun Liu,Peijiang Cao,Sun Han,J. S. Pan,Zhubing He,Kah-Wee Ang +14 more
TL;DR: In this paper, the energy band alignment between HfO2/multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy.