Experience and Educationis the best concise statement on education ever published by John Dewey, the man acknowledged to be the pre-eminent educational theorist of the twentieth century. Written more than two decades after Democracy and Education(Dewey's most comprehensive statement of his position in educational philosophy), this book demonstrates how Dewey reformulated his ideas as a result of his intervening experience with the progressive schools and in the light of the criticisms his theories had received. Analysing both "traditional" and "progressive" education, Dr. Dewey here insists that neither the old nor the new education is adequate and that each is miseducative because neither of them applies the principles of a carefully developed philosophy of experience. Many pages of this volume illustrate Dr. Dewey's ideas for a philosophy of experience and its relation to education. He particularly urges that all teachers and educators looking for a new movement in education should think in terms of the deeped and larger issues of education rather than in terms of some divisive "ism" about education, even such an "ism" as "progressivism." His philosophy, here expressed in its most essential, most readable form, predicates an American educational system that respects all sources of experience, on that offers a true learning situation that is both historical and social, both orderly and dynamic.

经验与教育 = Experience and education

http://science.sciencemag.org/content/sci/201/4359/899.2.full.pdf

Phenomenology of perception.

In the first two volumes of this work, Paul Ricoeur examined the relations between time and narrative in historical writing, fiction, and theories of literature. This final volume, a comprehensive reexamination and synthesis of the ideas developed in volumes 1 and 2, stands as Ricoeur's most complete and satisfying presentation of his own philosophy.

Time and Narrative

Process for the preparation of thin moncrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a second stage of intimately contacting the planar face (4) of said wafer with a stiffener (7) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer (1) and said stiffener (7) at a temperature above that at which the ion bombardment (2) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer (1) and a pressure effect in the said microbubbles, a separation between the thin film (5 ) and the mass of the substrate (6).

Process for the production of thin semiconductor material films

Gilles Fauconnier & Mark Turner, " The way we think: conceptual blending and the mind's hidden complexities"

Hydrogen is a quite common impurity in semiconductor-silicon technology: it is unintentionally but unavoidably added to the silicon after crystal growth during wafer processing, and continues to be present during wet oxidation, film depositions, etching and annealing steps. The effects of hydrogen in single crystal silicon at low concentration have been the subject of many papers, books and conference proceedings. Much less considered is the case of hydrogen at massive concentration. One final effect of heavy hydrogen loading is the formation of cavities and bubbles, with size up to 100 nm. Cavities and bubbles are also observed after helium loading by high-fluence ion implantation. This article reviews the basic mechanisms responsible for the formation and growth of such structures in single-crystalline silicon. In particular, starting from the loading (ion implantation) and having in mind the formation of the cavities, this paper will cover: the effects of substrate temperature, the interaction of vacancies and self-interstitials with the impurity, the mechanisms of gas segregation inside the cavities, the pressure which arises because of the segregation and the subsequent displacement field in the crystal, the stability against heat treatments of the gas in the cavities and of the cavities themselves. The understanding of the physical processes should lead to gain more insight in the processes of cleavage of the Si–Si bond and vacancy agglomeration which can induce not only the formation of cavities and bubbles, but also planar cutting or explosion.

Hydrogen and helium bubbles in silicon

A single chamber system for plasma-enhanced chemical vapor deposition was employed to deposit different films of SiOx:N,H with 0.85⩽x⩽1.91, which are studied here by Fourier transform infrared transmission spectroscopy. The sample composition was determined by Rutherford backscattering spectrometry, nuclear reaction, and elastic recoil detection analysis. Moreover, physical properties such as thickness uniformity, deposition rate, density, wet and dry etch rates, and stress are determined. A quantitative study of Si–OH, N–H, and Si–H bonds was performed and interpreted on the basis of the random bonding model; in addition, the presence of NH2, Si–O–Si, H2SiO2, and Si–N groups was detected. The effect of sample annealing at 600 and 900 °C was studied and two species of Si–H bonds were identified, one more stable and the other one easily releasable. A reordering effect of annealing was also detected as a reduction of the amorphous network stress and as the increase of the bond angle in the Si–O–Si groups up...

Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition

This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy, hydrogen implantation into single-crystal silicon. The implanted hydrogen profile and the ones resulting after thermal annealing in the range 100--800 \ifmmode^\circ\else\textdegree\fi{}C are detected by secondary-ion mass spectrometry and elastic-recoil detection analysis. The displacement field in the crystal, measured by channeling Rutherford-backscattering spectrometry, is found to depend on the direct radiation damage, the extended defects formed after ion implantation (revealed by transmission electron microscopy), and the implanted species. The contribution to the displacement field due to hydrogen-related defects has a characteristic ``reverse annealing'' in the range 100--400 \ifmmode^\circ\else\textdegree\fi{}C, essentially due to their formation kinetics.

Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon

Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy

The interaction of helium atoms with the radiation damage imparted to (100) silicon single crystal by He+ implantation at 5×1015 cm−2, 20 keV, and liquid–nitrogen temperature is investigated by means of various complementary techniques during and after thermal treatments. Thermal programmed desorption was used to study the dissociation kinetics of helium from the defects and to plan suitable heat treatments for the other techniques. The helium profiles were determined by 8 MeV 15N2+ elastic recoil detection, quantitative data on damage were obtained by channeling Rutherford backscattering spectrometry, double crystal x-ray diffraction, and positron annihilation spectroscopy. Isothermal treatments at 250 °C produce first helium redistribution and trapping in vacancy-like defects, rather than helium desorption from traps. The process is thermally activated with an effective activation energy, dispersed in a band from 1.1 to about 1.7 eV. For higher temperature treatments (2 h at 500 °C) the traps are almost...

Federico Corni

Papers

Hydrogen and helium bubbles in silicon

Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition

Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon

Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy

Helium-implanted silicon: A study of bubble precursors