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Fernando Josepetti Fonseca

Researcher at University of São Paulo

Publications -  97
Citations -  1329

Fernando Josepetti Fonseca is an academic researcher from University of São Paulo. The author has contributed to research in topics: Electroluminescence & OLED. The author has an hindex of 19, co-authored 95 publications receiving 1164 citations. Previous affiliations of Fernando Josepetti Fonseca include Federal University of Rio de Janeiro.

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Wine classification by taste sensors made from ultra-thin films and using neural networks

TL;DR: In this article, a sensor array made from Langmuir-Blodgett (LB) films of conducting polymers and lipids and layer-by-layer (LBL) films from chitosan deposited onto gold interdigitated electrodes was used to distinguish tastes and used to classify red wines.
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An artificial taste sensor based on conducting polymers.

TL;DR: The sensor could detect the suppression of sourness by sweetness displaying similarities with the biological system, and brands of several commercial beverages could be easily distinguished without complex analysis, including the discrimination of waters, tastants and wines.
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High-performance taste sensor made from Langmuir-Blodgett films of conducting polymers and a ruthenium complex.

TL;DR: A sensor array made up of nanostructured Langmuir-Blodgett (LB) films is used as an electronic tongue capable of identifying sucrose, quinine, NaCl, and HCl at the parts-per-billion level, being in some cases 3 orders of magnitude below the human threshold.
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Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

TL;DR: In this paper, the authors investigated the charge transport and shelf-degradation of MEH-PPV thin-films through stationary (e.g., current versus voltage) and transient (i.e., current-limited current) current techniques.
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Enhanced Sensitivity of Gas Sensor Based on Poly(3-hexylthiophene) Thin-Film Transistors for Disease Diagnosis and Environment Monitoring.

TL;DR: Poly(3-hexylthiophene) (P3HT) as the active layer in the widely-used bottom-gate/bottom-contact OTFT structure was deposited over highly-doped silicon substrates covered with thermally-grown oxide to detect vapor-phase compounds and presented approximately three-order higher normalized sensitivity than any chemical sensor addressed herein.