C
Cleber A. Amorim
Researcher at Sao Paulo State University
Publications - 24
Citations - 336
Cleber A. Amorim is an academic researcher from Sao Paulo State University. The author has contributed to research in topics: Electron mobility & Nanowire. The author has an hindex of 8, co-authored 20 publications receiving 277 citations. Previous affiliations of Cleber A. Amorim include Federal University of São Carlos.
Papers
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Journal ArticleDOI
Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices
Adenilson J. Chiquito,Cleber A. Amorim,Olivia M. Berengue,Luana S. Araujo,Eric P Bernardo,Edson R. Leite +5 more
TL;DR: The model is useful for any two-terminal device which cannot be described by a conventional diode configuration and effectively pinned the Fermi level at the SnO(2) surface, leading to the observed Schottky barriers.
Journal ArticleDOI
Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques
Cleber A. Amorim,Marco Roberto Cavallari,G. Santos,Fernando Josepetti Fonseca,Adnei Melges de Andrade,S. Mergulhão +5 more
TL;DR: In this paper, the authors investigated the charge transport and shelf-degradation of MEH-PPV thin-films through stationary (e.g., current versus voltage) and transient (i.e., current-limited current) current techniques.
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Organic Thin-Film Transistors as Gas Sensors: A Review.
Marco Roberto Cavallari,Marco Roberto Cavallari,Loren Mora Pastrana,Carlos Daniel Flecha Sosa,Alejandra Maria Rodriguez Marquina,José Enrique Eirez Izquierdo,Fernando Josepetti Fonseca,Cleber A. Amorim,Leonardo G. Paterno,Ioannis Kymissis +9 more
TL;DR: A comprehensive review on the working principle of thin-film transistors for gas sensing can be found in this paper, with concise descriptions of devices' architectures and parameter extraction based upon a constant charge carrier mobility model.
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Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device
TL;DR: In this paper, the Schottky-Mott model was used to estimate the zero bias barrier height of metal-semiconductor junction (AuNi/SnO2/Au-Ni) barrier in SnO2 nanowires over a wide temperature range.
Journal ArticleDOI
Observation of persistent photoconductivity in vanadyl phthalocyanine
Lucas Fugikawa Santos,Roberto Mendonça Faria,T. Del Caño,J.A. de Saja,Carlos J. L. Constantino,Cleber A. Amorim,S. Mergulhão +6 more
TL;DR: In this paper, vanadyl phthalocyanine (VOPc) organic light-emitting diodes were investigated using photoconductive time response, photocurrent-voltage characteristics and charge extraction in linearly increasing voltage (CELIV) measurements.