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Florian Böhm

Researcher at Humboldt University of Berlin

Publications -  13
Citations -  189

Florian Böhm is an academic researcher from Humboldt University of Berlin. The author has contributed to research in topics: Photonics & Photon. The author has an hindex of 5, co-authored 13 publications receiving 132 citations. Previous affiliations of Florian Böhm include Humboldt State University.

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Very Large and Reversible Stark-Shift Tuning of Single Emitters in Layered Hexagonal Boron Nitride

TL;DR: In this article, the authors report electrostatic control of a huge spectral shift for individually selected emitters in $h$-BN, based on applying an electric field via a conductive tip, which allows for a systematic analysis of crucial properties of individual solidstate emitters.
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Direct measurement of quantum efficiency of single-photon emitters in hexagonal boron nitride

TL;DR: In this paper, a metal hemisphere attached to the tip of an atomic force microscope is used to directly measure the lifetime variation of single-photon emitters as the tip approaches a hexagonal boron nitride (h-BN).
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Direct Measurement of Quantum Efficiency of Single Photon Emitters in Hexagonal Boron Nitride

TL;DR: In this article, the lifetime variation of single photon emitters in a few-layer hexagonal boron nitride (hBN) was measured using a metal hemisphere attached to the tip of an atomic force microscope.
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On-Chip Integration of Single Solid-State Quantum Emitters with a SiO$_2$ Photonic Platform

TL;DR: In this article, the authors present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO$_2$ grown thermally on a Si substrate.
Journal ArticleDOI

On-chip integration of single solid-state quantum emitters with a SiO2 photonic platform

TL;DR: In this paper, the authors present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO2 grown thermally on a Si substrate.