We demonstrate first room temperature, and ultrabright single photon emission from a color center in two-dimensional multilayer hexagonal boron nitride. Density Functional Theory calculations indicate that vacancy-related centers are a likely source of the emission.

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Quantum emission from hexagonal boron nitride monolayers

The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of nonclassical light in a phase-stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single-photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this paper, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters.

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Hybrid integration methods for on-chip quantum photonics

Quantum entanglement is among the most fascinating aspects of quantum theory. Entangled optical photons are now widely used for fundamental tests of quantum mechanics and applications such as quantum cryptography. Several recent experiments demonstrated entanglement of optical photons with trapped ions, atoms and atomic ensembles, which are then used to connect remote long-term memory nodes in distributed quantum networks. Here we realize quantum entanglement between the polarization of a single optical photon and a solid-state qubit associated with the single electronic spin of a nitrogen vacancy centre in diamond. Our experimental entanglement verification uses the quantum eraser technique, and demonstrates that a high degree of control over interactions between a solid-state qubit and the quantum light field can be achieved. The reported entanglement source can be used in studies of fundamental quantum phenomena and provides a key building block for the solid-state realization of quantum optical networks.

Quantum entanglement between an optical photon and a solid-state spin qubit

Integrated nanophotonics is an emerging field with high potential for quantum technology applications such as quantum sensing or quantum networks. A desired photonics platform is Si3N4 due to low-p...

Efficient Coupling of an Ensemble of Nitrogen Vacancy Center to the Mode of a High-Q, Si3N4 Photonic Crystal Cavity.

Realization of integrated quantum photonics is a key step toward scalable quantum applications such as quantum computing, sensing, information processing, and quantum material metrology. To enable ...

Machine Learning for Integrated Quantum Photonics

One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO$_2$ grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.

On-Chip Integration of Single Solid-State Quantum Emitters with a SiO$_2$ Photonic Platform

One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO2 grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.

https://iopscience.iop.org/article/10.1088/1367-2630/ab1144/pdf

On-chip integration of single solid-state quantum emitters with a SiO2 photonic platform

Thermally grown silica is one of the most desirable materials for the realization of optical waveguides and whispering-gallery mode micro-resonators due to the ultra-low propagation loss and broad transparency window from UV to mid-IR. Here, we present the design, fabrication, and characterization of a high-Q ring-resonator device with a monolithically integrated evanescent rib waveguide coupler made solely from silica thermally grown on a Si substrate. The device delivered an intrinsic Q-factor of $3.7\,\times \, 10^{6}$ and operated close to the critical coupling regime for both TE and TM polarizations. The achieved Q-factors were more than three orders of magnitude higher than those of comparable silica resonator devices. Furthermore, we showcase the ultra-low parasitic fluorescence unique to thermally grown silica and compare it to a device fabricated in Si3N4.

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Jan Schlegel

Papers

On-Chip Integration of Single Solid-State Quantum Emitters with a SiO$_2$ Photonic Platform

On-chip integration of single solid-state quantum emitters with a SiO2 photonic platform

Integrated Thermal Silica Micro-Resonator Waveguide System With Ultra-Low Fluorescence