François Silva

TL;DR: In this article, an up-to-date report on the main potential of CVD diamond films for industrial applications as well as on recent basic research which seeks to understand diamond deposition microwave plasma reactors.

TL;DR: In this article, the authors examined the deposition process and established that only microwave assisted diamond deposition plasma reactors can achieve the optimal growth conditions for the efficient generation of the precursor species to diamond growth.

TL;DR: It is shown in this paper that the use of high microwave power density plasmas is necessary to promote atomic hydrogen concentrations that are high enough to ensure the deposition of high purity diamond films at large growth rates and that scaling up this type of reactor to lower frequencies can result in high density plAsmas allowing for fast and homogeneous diamond deposition on up to 160 mm diameter surfaces.

TL;DR: In this article, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping are detailed.

TL;DR: In this paper, homoepitaxial thick diamond films were grown by CVD at high microwave power densities for temperatures ranging from 800 °C to 950 °C and with nitrogen additions from 75 to 200 ppm relative to the total gas flow.