Journal ArticleDOI
Coupled effect of nitrogen addition and surface temperature on the morphology and the kinetics of thick CVD diamond single crystals
TLDR
In this paper, homoepitaxial thick diamond films were grown by CVD at high microwave power densities for temperatures ranging from 800 °C to 950 °C and with nitrogen additions from 75 to 200 ppm relative to the total gas flow.About:
This article is published in Diamond and Related Materials.The article was published on 2007-04-01. It has received 110 citations till now. The article focuses on the topics: Diamond & Nitrogen.read more
Citations
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Journal ArticleDOI
Engineering shallow spins in diamond with nitrogen delta-doping
Kenichi Ohno,F. Joseph Heremans,Lee C. Bassett,Bryan A. Myers,D.M. Toyli,Ania C. Bleszynski Jayich,Chris Palmstrom,David D. Awschalom +7 more
TL;DR: In this paper, the authors demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasmaenhanced chemical vapor deposition.
Journal Article
Engineering shallow spins in diamond with nitrogen delta-doping
Kenichi Ohno,F. J. Heremans,Lee C. Bassett,Bryan A. Myers,D.M. Toyli,A. C. Bleszynski Jayich,Chris Palmstrom,David D. Awschalom +7 more
TL;DR: In this paper, the authors demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasmaenhanced chemical vapor deposition.
Journal ArticleDOI
High quality MPACVD diamond single crystal growth: high microwave power density regime
Jocelyn Achard,François Silva,Alexandre Tallaire,Xavier Bonnin,Guillaume Lombardi,Khaled Hassouni,Alix Gicquel +6 more
TL;DR: In this article, the authors examined the deposition process and established that only microwave assisted diamond deposition plasma reactors can achieve the optimal growth conditions for the efficient generation of the precursor species to diamond growth.
Journal ArticleDOI
Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
TL;DR: In this article, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping are detailed.
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Nitrogen in diamond
TL;DR: Recent progress in two complementary diamond synthesis methods-high pressure high temperature (HPHT) growth and chemical vapor deposition (CVD) is surveyed, how each is allowing ever more precise control of nitrogen incorporation in the resulting diamond, and how the diamond produced by either method can be further processed to achieve a particular outcome or property.
References
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Journal ArticleDOI
High carrier mobility in single-crystal plasma-deposited diamond.
Jan Isberg,J. Hammersberg,Erik Johansson,Tobias Wikström,Daniel J. Twitchen,A.J. Whitehead,Steven Edward Coe,Geoffrey Alan Scarsbrook +7 more
TL;DR: Room-temperature drift mobilities have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.
Journal ArticleDOI
Effect of nitrogen on the growth of diamond films
S. Jin,Theodore D. Moustakas +1 more
TL;DR: In this article, the incorporation of nitrogen in diamond films and its effect on film growth were investigated, and the nitrogen doping efficiency was found to be very low, consistent with a model of film growth involving simultaneous deposition and etching, which predicts a doping efficiency of 10−4.
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Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition
Alexandre Tallaire,Alan T. Collins,D. Charles,Jocelyn Achard,R.S. Sussmann,R.S. Sussmann,Alix Gicquel,Mark E. Newton,Andrew M. Edmonds,R. J. Cruddace +9 more
TL;DR: In this article, a single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma and it has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase.
Journal ArticleDOI
Nitrogen induced increase of growth rate in chemical vapor deposition of diamond
TL;DR: In this paper, a polycrystalline diamond film was grown by microwave assisted chemical vapor deposition from methane/hydrogen gas mixtures, and the addition of small amounts of nitrogen with concentrations below 50 ppm to the process gas was found to drastically increase the deposition rate depending on the microwave power.
Journal ArticleDOI
The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD
Akiyoshi Chayahara,Y. Mokuno,Yuji Horino,Y. Takasu,Hiromitsu Kato,Hiromichi Yoshikawa,Naoji Fujimori +6 more
TL;DR: In this article, the effect of nitrogen addition on growth rate, morphology and crystallinity during high-rate microwave plasma chemical vapor deposition (MPCVD) of diamond was investigated.