Aluminum‐doped zinc oxide films have been deposited on soda lime glass substrates from diethyl zinc, triethyl aluminum, and ethanol by atmospheric pressure chemical‐vapor deposition in the temperature range 367–444 °C. Film roughness was controlled by the deposition temperature and the dopant concentration. The films have resistivities as low as 3.0 × 10−4 Ω cm, infrared reflectances close to 90%, visible transmissions of 85%, and visible absorptions of 5.0% for a sheet resistance of 4.0 Ω/⧠. The aluminum concentration within doped films measured by electron microprobe is between 0.3 and 1.2 at. %. The electron concentration determined from Hall coefficient measurements is between 2.0 × 1020 and 8.0 × 1020 cm−3, which is in agreement with the estimates from the plasma wavelength. The Hall mobility, obtained from the measured Hall coefficient and dc resistivity, is between 10.0 and 35.0 cm2/V s. Over 90% of the aluminum atoms in the film are electrically active as electron donors. Scanning electron microscopy and x‐ray diffraction show that the films are crystalline with disklike structures of diameter 100–1000 nm and height 30–60 nm. The films have the desired electrical and optical properties for applications in solar cell technology and energy efficient windows.

Textured aluminum‐doped zinc oxide thin films from atmospheric pressure chemical‐vapor deposition

Handbook of Chemical Vapor Deposition: Principles, Technology and Applications provides information pertinent to the fundamental aspects of chemical vapor deposition. This book discusses the applications of chemical vapor deposition, which is a relatively flexible technology that can accommodate many variations. Organized into 12 chapters, this book begins with an overview of the theoretical examination of the chemical vapor deposition process. This text then describes the major chemical reactions and reviews the chemical vapor deposition systems and equipment used in research and production. Other chapters consider the materials deposited by chemical vapor deposition. This book discusses as well the potential applications of chemical vapor deposition in semiconductors and electronics. The final chapter deals with ion implantation as a major process in the fabrication of semiconductors. This book is a valuable resource for scientists, engineers, and students. Production and marketing managers and suppliers of equipment, materials, and services will also find this book useful.

Handbook of chemical vapor deposition (CVD) : principles, technology, and applications

Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells

https://bib.convdocs.org/v31706/?download=1

Handbook of chemical vapor deposition (cvd)

A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material.

Method and structure for fabricating solar cells using a layer transfer process

Textured tin oxide films produced by atmospheric pressure chemical vapor deposition from tetramethyltin and their usefulness in producing light trapping in thin film amorphous silicon solar cells

An inexpensive one‐step method is presented for fabricating hydrogenated amorphous silicon (a‐Si:H) films with good photovoltaic properties using chemical vapor deposition (CVD) from a mixture of polysilanes, SinH2n+2, in hydrogen at atmospheric pressure. This gas mixture is generated by a simple chemical reaction and used immediately in the CVD process. Thus, the highly flammable polysilanes need not be handled, distilled, stored, or transported. The conditions necessary for high (about 10%) hydrogen incorporation are explained. The method requires no expensive vacuum or electrical equipment and permits very high deposition rates (50–100 A/s). It is shown that the growth rate of the film is determined by the gas‐phase chemistry and not the surface chemistry. In addition a new, safe, and economical technique for phosphorus doping is described.

Simple method for preparing hydrogenated amorphous silicon films by chemical vapor deposition at atmospheric pressure

Optical properties of hydrogenated amorphous silicon based solar cells

A semiconductor device in which particles of semiconductive material extend as separate chains from respective first and second contacts. When one of the contacts is of p-type material, the conductive materials that extend from it are of likewise p-material. Similarly, when the contact is of n-type material, the chain that extends from it is also of n-material. In any case the particles can include both p-type and n-type. One of the contacts can have a prescribed work function and the other contact have a lower work function in order to produce a prescribed junction between the two contacts. In addition the contacts may be polymeric. The particulate bodies may range in size from 10 to about 3000 angstroms in diameter. The n-type particles provide a continuous path for electrons and the p-type particles provide a continuous path for holes. The particles are adhered to one another by an inorganic or organic binder, pressure, heat treatment or thermal fusion. Particles for the semiconductive device can be produced by introducing a gaseous phase semiconductane into a reaction chamber, creating particles from the semiconductane and collecting the particles thus created.

Particulate semiconductors and devices

Silicon dioxide for use as a diffusion barrier between soda lime glass and fluorine-doped tin oxide is deposited uniformly by atmospheric chemical vapor deposition from silane. oxygen, and nitrogen using a simple single-slot injector head. With a sufficiently thick silicon dioxide layer, the conductivity of the tin oxide is greatly improved by reducing the diffusion of sodium into the tin oxide as it is deposited between about 500 to 600 °C. Based upon the conductivity of thin lightly doped tin oxide films, it appears that at least 250 nm of silicon dioxide deposited on soda lime glass are required to essentially eliminate the diffusion of sodium into the tin oxide. However, only about 10 nm of silicon dioxide are required to obtain almost the full benefit of 250 nm thick films for moderately doped tin oxide films approximately 500 nm thick, The silicon dioxide deposition process is examined between 350 and 580 °C. The activation energy for the deposition is about 27 kJ/mole. Peak and average film deposition rates greater than 50 nm/sec and 10 nm/sec, respectively, may be obtained. The dependence of the film growth rate on the silane, oxygen, and propylene (an inhibitor) concentration is examined. The deposition rate is found to be limited by the rate of gas-phase reactions. Deposition conditions which yield high silane utilization and good film uniformity are discussed. The origin of undesirable by-product powder is studied. At low silane concentration, powder is mainly formed as the gases cool due to condensation from intermediate species.

Frank B. Ellis

Papers

Textured tin oxide films produced by atmospheric pressure chemical vapor deposition from tetramethyltin and their usefulness in producing light trapping in thin film amorphous silicon solar cells

Simple method for preparing hydrogenated amorphous silicon films by chemical vapor deposition at atmospheric pressure

Optical properties of hydrogenated amorphous silicon based solar cells

Particulate semiconductors and devices

Chemical vapor deposition of silicon dioxide barrier layers for conductivity enhancement of tin oxide films