Showing papers by "Franz R. Aussenegg published in 1978"
TL;DR: In this paper, a model is presented attributing the enhancement of Raman intensities in molecular complexes involving charge transfer to different displaceabilities of the electronic charge transferred between the donor and the acceptor.
40 citations
TL;DR: In this article, the vibrational Raman bands of some simple liquids are investigated on the influence of an external electric dc field, and the experiments demonstrate that Raman intensities and depolarization ratios increase with increasing field strength and decrease with even higher field strengths.
5 citations
TL;DR: In this paper, a high-voltage pulse generator is described which produces 20 kV rectangular pulses having 10 ns rise and fall times, a duration from 30 ns up to milliseconds and repetition rates up to 50 pulses s-1.
Abstract: A high-voltage pulse generator is described which produces 20 kV rectangular pulses having 10 ns rise and fall times, a duration from 30 ns up to milliseconds and repetition rates up to 50 pulses s-1. The main advantages of the device over customary circuits are low jitter, small triggering power and large range of pulse width.
5 citations
TL;DR: In undoped quartz glass, Bates et al. as mentioned in this paper found that the Raman bands at 490 and 600 cm−1 are correlated to these defects, as shown by irradiation of quartz glass with neutrons.
Abstract: In undoped quartz glass (e.g., Suprasil W 1) defects of the type Si+O− are found, presumably caused by breaks in Si—O bonds. The Raman bands at 490 and 600 cm−1 are correlated to these defects, as shown by Bates et al. by irradiation of quartz glass with neutrons. With increasing irradiation the intensity of the bands at 490 and 600 cm−1 increased, as well. At 2 × 1020 neutrons/cm2 the band 600 cm−1 increased by a factor of 7.3 compared to the sample without irradiation. Interpretation of this increase as caused by an increase in the number of Si+O− defects is supported by results from x-ray small angle scattering. On the other hand, Walrafen reports a decrease in the intensities of the 490 and 600 cm−1 bands by doping SiO2 glass with GeO2 or B2O3 as well as a small decrease of these bands with increasing content of OH. These facts are explained by interaction of the dopants with the Si+O− defects.
2 citations