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Furi Ling

Researcher at Huazhong University of Science and Technology

Publications -  60
Citations -  687

Furi Ling is an academic researcher from Huazhong University of Science and Technology. The author has contributed to research in topics: Terahertz radiation & Dielectric. The author has an hindex of 11, co-authored 55 publications receiving 516 citations.

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Dual-band tunable perfect metamaterial absorber in the THz range

TL;DR: A dual-band perfect absorber, composed of a periodically patterned elliptical nanodisk graphene structure and a metal ground plane spaced by a thin SiO(2) dielectric layer, is proposed and investigated.
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Dynamically Electrically Tunable Broadband Absorber Based on Graphene Analog of Electromagnetically Induced Transparency

TL;DR: In this article, a broadband absorber composed of graphene analog of electromagnetically induced transparency (EIT) and a metal ground plane spaced by a thin SiO 2 dielectric layer is proposed and investigated.
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Design of a tunable multiband terahertz waves absorber

TL;DR: In this article, a thermally tunable multiband terahertz metamaterial absorber with a periodic array of closed metallic square ring resonators and four metal bars parallel to the four side of the square ring, fabricated on the low-temperature co-fired ceramic (LTCC) strontium titanate (STO) layer dielectric substrate has been proposed.
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Dynamically Tunable Graphene Plasmon-Induced Transparency in the Terahertz Region

TL;DR: In this paper, an active control of graphene plasmon-induced transparency (GPIT) metamaterial structures, composed of periodically patterned monopolar graphene and dipolar graphene, was investigated.
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Active control of terahertz plasmon-induced transparency in the hybrid metamaterial/monolayer MoS2/Si structure.

TL;DR: The plasmon-induced transparency (PIT) effect was observed in the transmission spectra, resulting from the near-field coupling of two bright modes, and the experimental results indicated that the PIT metamaterial enhanced the interaction of infrared light with the monolayer MoS2/Si substrate.