G. B. Stefanovich

TL;DR: In this paper, the effect of a strong electric field on the metal-insulator phase transition in vanadium dioxide was studied and it was found that the field application to a silicon-SiO2-Si3N4-VO2 heterostructure shifts the critical temperature of this transition toward lower values under conditions when the thermal effects are minimized.

TL;DR: In this paper, the phase composition of anodic films on vanadium has been shown to depend on the oxidation conditions (electrolyte composition, oxidation current, and time), and the stoichiometry can be controlled from V O2 to V2O5.

TL;DR: In this article, the effect of synthesis conditions on the parameters of the metal-semiconductor transition in vanadium dioxide films has been studied, and it is shown that the temperature of the transition decreases with increasing W content and no phase transition occurs at doping levels above 6 at %.

TL;DR: In this paper, the Mott criterion is applied not only to heavily doped semiconductors but also to many other materials, including some transition-metal compounds, such as vanadium oxides (particularly, VO2 and V2O3).

TL;DR: In this article, the results of experimental studies and numerical simulation of the switching channel development dynamics in planar structures on the basis of vanadium dioxide are reported, and the obtained data on the variation of the temperature in the channel with time and of the current arisen after the pulsed load, and on the times of transition from the high-resistance to the low-reistance state and back are analyzed in order to determine the switching mechanism and to predict the functional characteristics of the switchable vanadium oxide structures as promising materials for the creation of relaxation generators that can serve as