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G

G. Brunauer

Researcher at Ludwig Maximilian University of Munich

Publications -  6
Citations -  166

G. Brunauer is an academic researcher from Ludwig Maximilian University of Munich. The author has contributed to research in topics: Neutron diffraction & Mullite. The author has an hindex of 5, co-authored 6 publications receiving 158 citations.

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High temperature single crystal properties of mullite

TL;DR: Extensive neutron diffraction and Rietveld studies of dense, hot pressed mullite (3Al 2 O 3 ·2SiO 2 ) have been conducted up to 1650°C in air, yielding a complete set of lattice parameters and axial thermal expansion coefficients as discussed by the authors.
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High temperature thermal expansion of mullite: an in situ neutron diffraction study up to 1600°C

TL;DR: In this article, the authors measured the thermal expansion of undoped and Cr-doped 3/2 mullites (10.8 wt.% Cr2O3) with in situ neutron and X-ray synchrotron (25-1000°C) diffraction techniques.
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High temperature crystal structure of a 3:2 mullite from neutron diffraction data

TL;DR: In this article, high temperature neutron investigations up to 1950 K of 3:2-sintered mullite show a smooth reversible behaviour which can be described by a rotation of more or less rigid TO4 (T = Al(2),Si)-tetrahedra and accompanying distortions of the Al(1)O6-octahedra.
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Domain structure and phase transition in Sc-doped zirconia

TL;DR: In this paper, the temperature dependence of the domain structure associated with the ferroelastic phase transition (FmmRm) in ZrO2 doped with 11% Sc2O3 has been determined from a peak shape analysis of high-resolution synchrotron x-ray powder diffraction data.
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In Situ High Temperature Neutron Diffraction Study of Sr/Mg‐doped Lanthanum Gallate Superionic Conductors under Microwave Irradiation

TL;DR: In this article, a definite non-thermal microwave effect on the resulting crystallographic structures was discovered mainly derived from opposite changes of the lattice constants and the atomic displacement parameters, due to changes in the phonon density of states (DOS) due to coupling of the microwave field via (anharmonic) multi phonon processes, limited phonon life times and local modes arising from the defects.