G
G. Cho
Researcher at Lawrence Berkeley National Laboratory
Publications - 30
Citations - 544
G. Cho is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Amorphous silicon & Particle detector. The author has an hindex of 12, co-authored 30 publications receiving 526 citations.
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Journal ArticleDOI
High efficiency neutron sensitive amorphous silicon pixel detectors
A. Mireshghi,G. Cho,J. Drewery,W.S. Hong,T. Jing,Hyoung-Koo Lee,Selig N. Kaplan,Victor Perez-Mendez +7 more
TL;DR: In this article, a multi-layer a-Si:H based thermal neutron detector was designed, fabricated and simulated by Monte Carlo method, and the detector consists of two aSi-H pin detectors prepared by PECVD and interfaced with coated layers of Gd, as a thermal neutron converter.
Journal ArticleDOI
X-ray and charged particle detection with CsI(Tl) layer coupled to a Si:H photodiode layers
Ichiro Fujieda,G. Cho,J. Drewery,T. Gee,T. Jing,Selig N. Kaplan,Victor Perez-Mendez,D. Wildermuth,R. A. Street +8 more
TL;DR: In this article, a real-time X-ray and charged-particle imager with digitized position output can be built either by coupling a fast scintillator to a photodiode array or by forming one on a photode array directly.
Journal ArticleDOI
Amorphous silicon pixel layers with cesium iodide converters for medical radiography
T. Jing,C.A. Goodman,J. Drewery,G. Cho,W.S. Hong,Hyoung-Koo Lee,Selig N. Kaplan,A. Mireshghi,Victor Perez-Mendez,D. Wildermuth +9 more
TL;DR: In this article, the authors describe the properties of evaporated layers of cesium iodide (thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays.
Amorphous silicon pixel layers with cesium iodide converters for medical radiography
T. Jing,G. Cho,J. Drewery,C.A. Goodman,D. Wildermuth,W.S. Hong,A. Mireshghi,Selig N. Kaplan,Hyoung-Koo Lee,Victor Perez-Mendez +9 more
TL;DR: In this paper, the authors describe the properties of evaporated layers of cesium iodide (thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays.
Journal ArticleDOI
High Sensitivity Readout of 2D a-Si Image Sensors
Ichiro Fujieda,Robert A. Street,Richard L. Weisfield,S. Nelson,Per Nylén,Victor Perez-Mendez,G. Cho +6 more
TL;DR: In this article, a highly sensitive charge sensitive amplifier IC was used to read out large-area two-dimensional arrays of amorphous silicon (a-Si) p-i-n photodiodes addressed by a-Si thin film transistors (TFTs).