Digital radiography offers the potential of improved image quality as well as providing opportunities for advances in medical image management, computer-aided diagnosis and teleradiology. Image quality is intimately linked to the precise and accurate acquisition of information from the x-ray beam transmitted by the patient, i.e. to the performance of the x-ray detector. Detectors for digital radiography must meet the needs of the specific radiological procedure where they will be used. Key parameters are spatial resolution, uniformity of response, contrast sensitivity, dynamic range, acquisition speed and frame rate. The underlying physical considerations defining the performance of x-ray detectors for radiography will be reviewed. Some of the more promising existing and experimental detector technologies which may be suitable for digital radiography will be considered. Devices that can be employed in full-area detectors and also those more appropriate for scanning x-ray systems will be discussed. These include various approaches based on phosphor x-ray converters, where light quanta are produced as an intermediate stage, as well as direct x-ray-to-charge conversion materials such as zinc cadmium telluride, amorphous selenium and crystalline silicon.

/pdf/x-ray-detectors-for-digital-radiography-3eiaplcl6i.pdf

X-ray detectors for digital radiography

Spatial and temporal imaging characteristics of an amorphous silicon flat-panel imager(FPI) were investigated in terms relevant to the application of such devices in cone-beam computed tomography(CBCT) and other x-ray imaging modalities, including general radiography, fluoroscopy, mammography, radiotherapy portal imaging, and nondestructive testing. Specifically, issues of image lag (including the magnitude, spatial uniformity, temporal-frequency characteristics, and dependence upon exposure and frame time) and long-term image persistence (“ghosts”) were investigated. As part of the basic characterization of the FPI, pixel dark signal and noise (magnitude, temporal stability, and spatial uniformity) as well as radiation response (signal size, linearity, gain, and reciprocity) were also measured. Image lag was analyzed as a function of frame time and incident exposure. First-frame lag (i.e., the relative residual signal in the first frame following readout of an exposure) was ∼2–10%, depending upon incident exposure and was spatially nonuniform to a slight degree across the FPI; second-, third-, and fourth-frame lag were ∼0.7%, 0.4%, and 0.3%, respectively (at 25% sensor saturation). Image lag was also analyzed in terms of the temporal-frequency-dependent transfer function derived from the radiation response, allowing a quantitative description of system components contributing to lag. Finally, the contrast of objects as a function of time following an exposure was measured in order to examine long-term image persistence (“ghosts”). Ghosts were found to persist up to 30 min or longer, depending upon the exposure and frame time. Two means of reducing the apparent contrast of ghost images were tested: (i) rapid scanning of the FPI at maximum frame rate, and (ii) flood-field exposure of the FPI; neither was entirely satisfactory. These results pose important considerations for application of FPIs in CBCT as well as other x-ray imaging modalities. For example in CBCT, the magnitude of image lag is such that significant artifacts in tomographic reconstructions may result if strategies are not adopted either to reduce or correct the lag between successive projections (e.g., rapid scanning between projections or iterative correction algorithms, respectively). Similarly, long-term image persistence may necessitate frequent recalibration of offset corrections.

A ghost story: spatio-temporal response characteristics of an indirect-detection flat-panel imager.

A theoretical method is presented that allows identification of optimal x-ray imaginggeometry, considering the effects of x-ray source distribution, imaging task, x-rayscatter, and imagerdetective quantum efficiency (DQE). Each of these factors is incorporated into the ICRU-recommended figure of merit for image quality, the detectability index, which is maximized to determine the optimal system configuration. Cascaded systems analysis of flat-panel imagers (FPIs) is extended to incorporate the effects of x-rayscatter directly in the DQE, showing that x-rayscatter degrades DQE as an additive noise source. Optimal magnification is computed for FPI configurations appropriate to (but not limited to) cone-beam computed tomography(CBCT). The sensitivity of the results is examined as a function of focal spot size, imaging task (e.g., ideal observer detection or discrimination tasks), x-rayscatter fraction, detector resolution, and additive noise. Nominal conditions for FPI-CBCT result in optimal magnification of ∼1.4–1.6, depending primarily on the magnitude of the x-rayscatter fraction. The methodology is sufficiently general that examination of optimal geometry for other FPI applications (e.g., chest radiography, fluoroscopy, and mammography) is possible. The degree to which increased exposure can be used to compensate for x-rayscatter degradation is quantified.

Optimization of x-ray imaging geometry (with specific application to flat-panel cone-beam computed tomography).

We report the performance of a 41×41- cm 2 amorphous silicon-based flat panel detector designed for radiographicimaging applications. The detector consists of an array of photodiodes and thin film transistor switches on a 0.2-mm pitch with an overlying thallium-doped cesium iodide scintillator. The performance of the detector was evaluated through measurement of the frequency-dependent detective quantum efficiency [DQE(f)]. Measurements of the characteristic curve and modulation transfer function(MTF) are also reported. All measurements were made in a radiographicimaging mode with a readout time of 125 ms. We evaluated a total of 15 detectors. One detector was characterized at a range of exposures and at three different electronic gain settings. Measurements of DQE(f) and MTF were also performed as a function of position on one detector. The measured DQE at an exposure of about 1 mR was 0.66 at zero spatial frequency and fell smoothly with frequency to a value of 0.24 at the Nyquist frequency, 2.5 cycles/mm. The DQE is independent of exposure for exposures in the upper 80% of each gain range, but is reduced somewhat at lower exposures because of the influence of additive system noise. The reduction can be controlled by adjusting the electronic gain. For a gain that allows a maximum exposure of 5 mR, the DQE at 0.056 mR was 0.64 at zero frequency and 0.19 at 2.5 cycles/mm. The standard deviation in DQE among measurements on different detectors was less than 0.02 at any frequency. The presampling MTF was 0.26 at 2.5 cycles/mm. The standard deviation in MTF among measurements on different detectors was less than 0.01 at any frequency. Both MTF and DQE were substantially independent of position on the detector.

Performance of a 41X41-cm2 amorphous silicon flat panel x-ray detector for radiographic imaging applications.

Organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using low temperature processes, making them particularly attractive for large area image detectors on lightweight flexible plastic substrates. Moreover, their photophysical and optoelectronic properties can be tuned both at a material and device level. Visible-light OPDs are proposed for use in indirect-conversion X-ray detectors, fingerprint scanners, and intelligent surfaces for gesture recognition. Near-infrared OPDs find applications in biomedical imaging and optical communications. For most applications, minimizing the OPD dark current density (Jd) is crucial to improve important figures of merits such as the signal-to-noise ratio, the linear dynamic range, and the specific detectivity (D*). Here, a quantitative analysis of the intrinsic dark current processes shows that charge injection from the electrodes is the dominant contribution to Jd in OPDs. Jd reduction is typically addressed by fine-tuning the active layer energetics and stratification or by using charge blocking layers. Yet, most experimental Jd values are higher than the calculated intrinsic limit. Possible reasons for this deviation are discussed, including extrinsic defects in the photoactive layer and the presence of trap states. This provides the reader with guidelines to improve the OPD performances in view of imaging applications.

https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.201904205

Organic Photodetectors and their Application in Large Area and Flexible Image Sensors: The Role of Dark Current

A highly sensitive charge-sensitive amplifier IC was used to read out large-area two-dimensional arrays of amorphous silicon (a-Si) p-i-n photodiodes addressed by a-Si thin film transistors (TFTs). At the highest sensitivity mode, the random noise of the sensor was equivalent to an input charge of 1500 electrons rms. Feedthrough charge injection associated with TFT switching had to be avoided at the expense of the signal charge. Image lag caused by charge trapping in a-Si was suppressed by limiting the input light intensity. A simple model was developed for the noise contribution from a pixel and compared with measurements.

High Sensitivity Readout of 2D a-Si Image Sensors

The x-ray imaging performance is reported using polycrystalline lead iodide as a thick semiconductor detector on an active matrix flat panel array. We have developed a test image sensor with 100 micron pixel size in a 512 X 512 format, using amorphous silicon TFTs for matrix addressing. The new 14 bit electronic system allows radiographic and fluoroscopic x-ray imaging. PbI2 has larger x-ray absorption and higher charge generation efficiency than selenium, and has the potential for higher sensitivity imaging. The films are deposited by vacuum sublimation and have been grown thicker than 100 micrometer. Measurements of the carrier transport and charge collection, together with modeling studies show how the x-ray sensitivity depends on the material properties. Imaging measurements find excellent spatial resolution and confirm models of the x-ray sensitivity. Both radiographic and fluoroscopic imaging are demonstrated. While good overall imaging is obtained, the dark leakage current and image lag need further improvement.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

X-ray imaging using lead iodide as a semiconductor detector

Six inch diagonal, two-dimensional amorphous silicon imaging arrays with 256x240 pixels of 450 micron pitch have been fabricated. Examples of images made under visible light and X-rays illustrate applications to electronic document input and medical imaging. The limits to the array performance are explored through studies of image lag due to deep trapping at dangling bond defects in the a-Si:H sensor, and through measurements of electronic noise.

Large Area 2-Dimensional a-Si:H Imaging Arrays

We report on a-Si direct detection x-ray image sensors with polycrystalline PbI2, and more recently with HgI2. The arrays have 100 micron pixel size and, we study those aspects of the detectors that mainly determine the DQE, such as sensitivity, effective fill factor, dark current noise, noise power spectrum, and x-ray absorption. Line spread function data show that in the PbI2 arrays, most of the signal in the gap between pixels is collected, which is important for high,DQE. The leakage current noise agrees with the expected shot noise value with only a small enhancement at high bias voltages. The noise power spectrum under x-ray exposure is reported and compared to the spatial resolution information. The MTF is close to the ideal sinc function, but is reduced by the contribution of K-fluorescence in the PbI2 film for which we provide new experimental evidence. The role of noise power aliasing in the DQE and the effect of slight image spreading are discussed. Initial studies of HgI2 as the photoconductor material show very promising results with high x-ray sensitivity and low leakage current.

High-resolution direct-detection x-ray imagers

Large area amorphous silicon image sensor arrays are important for x-ray medical imaging and document scanning as well as a variety of other applications where large sensor size is required. The paper first summarizes the present state of the flat panel x-ray imager technology, and compares the two main approaches for x-ray detection. We then describe the performance of a new, large area, high resolution, radiographic imager based on a single amorphous silicon array with 2304×3200 pixels, and an active area of 30×40 cm (12×16″).

Per Nylén

Papers

High Sensitivity Readout of 2D a-Si Image Sensors

X-ray imaging using lead iodide as a semiconductor detector

Large Area 2-Dimensional a-Si:H Imaging Arrays

High-resolution direct-detection x-ray imagers

Amorphous Silicon Sensor Arrays for X-Ray and Document Imaging