G
G. Gobsch
Publications - 6
Citations - 99
G. Gobsch is an academic researcher. The author has contributed to research in topics: Grain boundary & Electronic structure. The author has an hindex of 5, co-authored 6 publications receiving 98 citations.
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A novel self‐consistent theory of the electronic structure of inversion layers in InSb MIS structures
TL;DR: In this article, a simple method for the selfconsistent quantum mechanical calculation of the electronic structure of inversion layers in materials with a Kane conduction band is presented which is well suited for the application in semiconductor technique.
Journal ArticleDOI
Self-consistent calculation of the electronic structure of n-inversion layers adjacent to the grain boundary in InSb bicrystals
G. Gobsch,G. Paasch,H. Übensee +2 more
TL;DR: In this article, self-consistent calculations on the quantized electron inversion layer adjacent to the grain boundary in p-doped InSb bicrystals are performed for the first time.
Journal ArticleDOI
Self‐Consistent Theory of the Electronic Structure of Inversion Layers. I. A New Method Using the Modified Local Density Approximation
TL;DR: In this paper, a method for the selfconsistent calculation of electron and hole densities, band bending, and subband energies in inversion layers of MIS-structures is described.
Journal ArticleDOI
Calculation of the subband structure of inversion layers in p-InSb bicrystals
Journal ArticleDOI
Theory for n‐Surface Charge Layers in Hg1−xCdxTe MIS Structures
TL;DR: In this article, the energy gap of the Hg1−xCdxTe-system can be controlled by the mole fraction x of Cd, which offers the possibility to use this material as a model system for systematic investigations especially in the narrow gap region (corresponding to 0.16 ≦ x ≦ 0.25).