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G. Le Lay

Researcher at Aix-Marseille University

Publications -  136
Citations -  4810

G. Le Lay is an academic researcher from Aix-Marseille University. The author has contributed to research in topics: Silicon & X-ray photoelectron spectroscopy. The author has an hindex of 31, co-authored 136 publications receiving 4520 citations. Previous affiliations of G. Le Lay include University of Provence & Centre national de la recherche scientifique.

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Surface spectroscopy studies of Pb monolayers on Si(111)

TL;DR: In this paper, the authors studied the adsorption process and the thermal desorption of Pb on clean Si(111)7 × 7 substrates using LEED and AES, and the growth kinetics followed a Stranski-Krastanov mode (2D adlayer + 3D islands).
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Experimental evidence for 400-meV valence-band dispersion in solid C60.

TL;DR: It is demonstrated that at the low photon energy of ħω=8.1 eV the k∥ resolution becomes sufficient to resolve two bands in the feature derived from the highest-occupied molecular orbital which show a dispersion of the order of 400 meV.
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Formation of noble-metal-Si(100) interfaces

TL;DR: In this article, a comparison between noble metal/Si(100) and noble-metal/Si (111) interface properties is made, based on electron spectroscopy and microscopy.
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Comparative structural and electronic studies of hydrogen interaction with isolated versus ordered silicon nanoribbons grown on Ag(110)

TL;DR: The geometry and electronic structure of two different types of self-aligned silicon nanoribbons (SiNRs) are investigated, forming either isolated SiNRs or a self-assembled 5 × 2/5 × 4 grating on an Ag(110) substrate, by scanning tunnelling microscopy and high resolution x-ray photoelectron spectroscopy.