G
G. Le Lay
Researcher at Aix-Marseille University
Publications - 136
Citations - 4810
G. Le Lay is an academic researcher from Aix-Marseille University. The author has contributed to research in topics: Silicon & X-ray photoelectron spectroscopy. The author has an hindex of 31, co-authored 136 publications receiving 4520 citations. Previous affiliations of G. Le Lay include University of Provence & Centre national de la recherche scientifique.
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Journal ArticleDOI
Synthesis and electrical conductivity of multilayer silicene
Patrick Vogt,P. Capiod,Maxime Berthe,Andrea Resta,P. De Padova,Thomas Bruhn,G. Le Lay,Bruno Grandidier +7 more
TL;DR: In this paper, the epitaxial growth and electrical resistance of multilayer silicene on the Ag(111) surface has been investigated and it was shown that the atomic structure of the first layer differs from the next layers and that the adsorption of Si induces the formation of extended Silicene terraces surrounded by step bunching.
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Isothermal desorption spectroscopy for the study of two-dimensional condensed phases: Investigation of the Au (deposit)/Si(111) (substrate) system; application to the Xe/(0001)graphite system
G. Le Lay,M. Manneville,R. Kern +2 more
TL;DR: In this article, a general model for the desorption of condensed 2D phases is elaborated, and it is shown that the order of the reaction has two extrema, 0 and 1 2, depending on whether surface diffusion is important or not.
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Growth of Si nanostructures on Ag(001)
TL;DR: In this article, the first stages of the growth of silicon on Ag(0 0 1) at moderate temperatures start by the formation of a p(3 · 3) superstructure, which continuously evolves with increasing coverage toward a more complex superstructure.
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High-Resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped Gaas(100) Surfaces
TL;DR: A high-resolution core-level spectroscopy study of the GaAs(100) surface prepared by thermal decapping of surfaces grown by molecular-beam epitaxy, providing a firm basis for further studies of electrical and chemical properties of metal-semiconductor interfaces.
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Ge/Ag(111) semiconductor-on-metal growth: Formation of an Ag 2 Ge surface alloy
Hamid Oughaddou,S. Sawaya,Jacek Goniakowski,Bernard Aufray,G. Le Lay,G. Le Lay,Guy Tréglia,J.P. Bibérian,Nicholas Barrett,C. Guillot,Andrew J. Mayne,Gérald Dujardin +11 more
TL;DR: In this paper, a semiconductor on a close-packed surface of a metal for a system that tends to phase separation was studied, and it was shown that deposition of 1/3 monolayer of Ge on Ag(111) surprisingly induces a surface alloy forming a superstructure observed in low energy electron diffraction patterns.