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G.S. Deep

Researcher at Federal University of Paraíba

Publications -  49
Citations -  445

G.S. Deep is an academic researcher from Federal University of Paraíba. The author has contributed to research in topics: Hysteresis & Input offset voltage. The author has an hindex of 11, co-authored 49 publications receiving 423 citations.

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Modeling and performance of vanadium-oxide transition edge microbolometers

TL;DR: In this article, an algebraic hysteresis model has been used to model the resistance-temperature characteristic of the sensor, and in conjunction with established bolometer theory, the responsivity of a VO2 film is calculated and compared with experimental data.
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Thermal dynamics of VO2 films within the metal–insulator transition: Evidence for chaos near percolation threshold

TL;DR: The thermal dynamics of thin vanadium dioxide films at the martensitic metal-insulator phase transition has been evaluated experimentally by thermal excitation spectroscopy in this article.
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A highly linear single p-n junction temperature sensor

TL;DR: In this paper, the forward current through the p-n junction is switched alternately between two fixed values, and the difference between the corresponding voltages is shown to vary linearly with temperature.
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A hysteresis model for a vanadium dioxide transition-edge microbolometer

TL;DR: The adaptation of the Preisach model is presented to describe mathematically the hysteresis in the resistance-temperature characteristics of vanadium-dioxide (VO/sub 2/) thin film radiation sensors.
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An Evaluation of Alternative Techniques for Monitoring Insulator Pollution

TL;DR: The use of pattern-recognition techniques to build classifiers that diagnose the operational state of the insulation structure in an online application indicated that pollution deposit can be evaluated by the proposed techniques, especially when a combination of sensors is employed.