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Gaetano Granozzi

Researcher at University of Padua

Publications -  408
Citations -  10311

Gaetano Granozzi is an academic researcher from University of Padua. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Catalysis. The author has an hindex of 42, co-authored 399 publications receiving 8858 citations. Previous affiliations of Gaetano Granozzi include Istituto Italiano di Tecnologia & University of Düsseldorf.

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Conformational flexibility of isotactic poly‐1‐olefins

TL;DR: In this paper, the conformational flexibility of isotactic polypropylene and poly(3-methyl-1-butene) has been studied in relation to their polymorphism, and the energy calculations show the predominant contribution of intramolecular effects and allow a valid interpretation of polymorphous behaviour.
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The nature of the lowest virtual molecular orbitals in fluorobenzenes

TL;DR: In this paper, the lowest unoccupied molecular orbital, which would assist the first electron transfer in the electrode reduction of the title compounds, is invariably of π type along the series, no σ*-π* crossover being predicted.
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EVIDENCE BY ANGLE-SCANNED PHOTOELECTRON DIFFRACTION FOR A CO-INDUCED RESTRUCTURING OF A Ni/Pt(111) MONOLAYER

TL;DR: In this article, angle-scanned photoelectron diffraction measurements have been performed prior to and after CO exposure onto a Ni monolayer deposited on Pt(111), and there is evidence for an adsorbate-induced restructuring such that the initial atomically flat Ni layer gives place to at least two-layer-high Ni islands.
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He(I) and He(II) photoelectron spectra of methyltin chlorides

TL;DR: In this paper, the photoelectron spectra of the methyltin chlorides Sn(CH3)3Cl and Sn( CH3)2Cl2 are reported and a reassignment of the spectra is suggested based on the variation of relative intensity patterns on passing from He(I) to He(II) excitation.
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Characterization of TiO2 thin films in the EUV and soft x-ray region

TL;DR: In this article, three TiO2 thin films with thicknesses of 22.7, 48.5 and 102.9 nm were grown on Si (100) substrates by the technique of electron beam evaporation.