G
Ganesh Balamurugan
Researcher at University of Texas at Austin
Publications - 6
Citations - 13
Ganesh Balamurugan is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Ion implantation & Monte Carlo method. The author has an hindex of 2, co-authored 6 publications receiving 11 citations.
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Proceedings ArticleDOI
Computationally efficient ion implantation damage model: modified Kinchin-Pease model
TL;DR: In this paper, a new computationally efficient ion implantation damage model has been developed and implemented in UT-MARLOWE Version 4.0. Based on the modified Kinchin-Pease formula, this model accounts for damage generation, damage accumulation, defect encounters and amorphization.
Journal ArticleDOI
A computationally efficient ion implantation damage model and its application to multiple implant simulations
Geng Wang,S. Tian,M. Morris,B. Obradovic,Ganesh Balamurugan,Al F. Tasch,S. Morris,H. Kennel,P. Packan,C. Magee,J. Sheng,Rex Lowther,J. Linn,Charles M. Snell +13 more
TL;DR: A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1 as discussed by the authors, which accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way.
Journal ArticleDOI
Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon
Yi Chen,B. Obradovic,M. F. Morris,Geng Wang,Ganesh Balamurugan,Di Li,Al F. Tasch,Dennis Kamenitsa,W. McCoy,S. Baumann,R. Bleier,D. Sieloff,D. Dyer,P. Zeitzoff +13 more
TL;DR: Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and described in this article, which can be used as inputs for transient enhanced diffusion simulation and subsequent multiple implant simulation.
Proceedings ArticleDOI
Improved analytic models and efficient parameter extraction for computationally efficient 1D and 2D ion implantation modeling
TL;DR: In this paper, the authors proposed analytic models for both the impurity and the damage profiles in one and two dimensions using 14 Legendre polynomials (16 model parameters).
Proceedings ArticleDOI
Experimental verification of a new physically based low energy (<5 keV) ion implant model
B. Obradovic,Geng Wang,Ganesh Balamurugan,Yi Chen,Al F. Tasch,Charles M. Snell,M. Lee,D. Wagner,J. Jackson,S. Baumann,R. Bleiler,P.B. Merril,V. Chia +12 more
TL;DR: In this article, an efficient Monte Carlo ion implantation model based on a substantially modified Binary Collision Approximation (BCA) has been developed and implemented in UT-MARLOWE.