A
Al F. Tasch
Researcher at University of Texas at Austin
Publications - 180
Citations - 3141
Al F. Tasch is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Ion implantation & Monte Carlo method. The author has an hindex of 28, co-authored 180 publications receiving 3092 citations. Previous affiliations of Al F. Tasch include Motorola.
Papers
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Journal ArticleDOI
Ion beams in silicon processing and characterization
Eric Chason,S. T. Picraux,J. M. Poate,J. O. Borland,Michael I. Current,T. Diaz de la Rubia,D. J. Eaglesham,O. W. Holland,Mark E. Law,Charles W. Magee,James W. Mayer,John Melngailis,Al F. Tasch +12 more
TL;DR: In this paper, the authors review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed.
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Correlation between silicon hydride species and the photoluminescence intensity of porous silicon
C. Tsai,K.-H. Li,D. Kinosky,R. Qian,T. Hsu,J. Irby,Sanjay K. Banerjee,Al F. Tasch,Joe C. Campbell,B. K. Hance,J. M. White +10 more
TL;DR: The role of silicon hydride species in the photoluminescence intensity behavior of porous Si has been studied in this article, where surfaces of luminescent porous Si samples were converted to a predominate SiH termination using a remote H plasma.
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In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen
TL;DR: In this article, a low-temperature cleaning technique for removing both carbon and oxygen from a Si surface using a combination of ex situ wet chemical clean and an in situ remote rf plasma-excited hydrogen clean in an ultrahigh vacuum chamber was demonstrated.
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Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics
TL;DR: In this article, a first-principles approach to inversion layer quantization, valid for arbitrarily complex band structures, has been developed, which has allowed, for the first time, hole quantization and its effects on p-MOSFET device characteristics to be studied.
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A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs
S.A. Hareland,Shyam Krishnamurthy,S. Jallepalli,Choh-Fei Yeap,K. Hasnat,Al F. Tasch,C.M. Maziar +6 more
TL;DR: In this paper, a three-subband model was proposed to predict both the quantum mechanical effects in electron inversion layers and the electron distribution within the inversion layer in N-channel MOS transistors.