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Gangadhar Das

Researcher at Raja Ramanna Centre for Advanced Technology

Publications -  23
Citations -  149

Gangadhar Das is an academic researcher from Raja Ramanna Centre for Advanced Technology. The author has contributed to research in topics: Beamline & Synchrotron radiation. The author has an hindex of 6, co-authored 17 publications receiving 111 citations. Previous affiliations of Gangadhar Das include Homi Bhabha National Institute.

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Direct Determination of Oxidation States of Uranium in Mixed-Valent Uranium Oxides Using Total Reflection X-ray Fluorescence X-ray Absorption Near-Edge Spectroscopy

TL;DR: The present study has demonstrated the possibility of application of TXRF for the oxidation state determination and elemental speciation of radioactive substances in a nondestructive manner with very small amount of sample requirement.
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Simultaneous measurements of X-ray reflectivity and grazing incidence fluorescence at BL-16 beamline of Indus-2

TL;DR: The results reveal in-depth information for precise determination of surface and interface properties of thin layered materials demonstrating the immense potential of the combined measurements of x-ray reflectivity and grazing incidence fluorescence on a single reflectometer.
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An interactive graphical user interface (GUI) for the CATGIXRF program – for microstructural evaluation of thin film and impurity doped surfaces

TL;DR: In this article, an interactive graphical user interface (GUI) for the CATGIXRF program is presented, which facilitates determination of microstructural parameters on angstrom length scale for the nanostructured thin layered materials using synchrotron as well as laboratory X-ray sources.
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X-ray standing wave analysis of nanostructures using partially coherent radiation

TL;DR: In this paper, the effect of longitudinal coherence on total reflection assisted X-ray standing wave (TR-XSW) analysis of nanoscale materials is quantitatively demonstrated by showing how the XSW fringe visibility can be strongly damped by decreasing the spectral resolution of the incident x-ray beam.
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Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition

TL;DR: In this paper, a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static disorder was performed.