Ultrathin two-dimensional nanosheets of layered transition metal dichalcogenides (TMDs) are fundamentally and technologically intriguing. In contrast to the graphene sheet, they are chemically versatile. Mono- or few-layered TMDs - obtained either through exfoliation of bulk materials or bottom-up syntheses - are direct-gap semiconductors whose bandgap energy, as well as carrier type (n- or p-type), varies between compounds depending on their composition, structure and dimensionality. In this Review, we describe how the tunable electronic structure of TMDs makes them attractive for a variety of applications. They have been investigated as chemically active electrocatalysts for hydrogen evolution and hydrosulfurization, as well as electrically active materials in opto-electronics. Their morphologies and properties are also useful for energy storage applications such as electrodes for Li-ion batteries and supercapacitors.

http://nanotubes.rutgers.edu/PDFs/nchem_TMDs_2013.pdf

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

If they could be easily exfoliated, layered materials would become a diverse source of two-dimensional crystals whose properties would be useful in applications ranging from electronics to energy storage. We show that layered compounds such as MoS2, WS2, MoSe2, MoTe2, TaSe2, NbSe2, NiTe2, BN, and Bi2Te3 can be efficiently dispersed in common solvents and can be deposited as individual flakes or formed into films. Electron microscopy strongly suggests that the material is exfoliated into individual layers. By blending this material with suspensions of other nanomaterials or polymer solutions, we can prepare hybrid dispersions or composites, which can be cast into films. We show that WS2 and MoS2 effectively reinforce polymers, whereas WS2/carbon nanotube hybrid films have high conductivity, leading to promising thermoelectric properties.

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Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

Controlling surface structure at the atomic scale is paramount to developing effective catalysts. For example, the edge sites of MoS(2) are highly catalytically active and are thus preferred at the catalyst surface over MoS(2) basal planes, which are inert. However, thermodynamics favours the presence of the basal plane, limiting the number of active sites at the surface. Herein, we engineer the surface structure of MoS(2) to preferentially expose edge sites to effect improved catalysis by successfully synthesizing contiguous large-area thin films of a highly ordered double-gyroid MoS(2) bicontinuous network with nanoscaled pores. The high surface curvature of this catalyst mesostructure exposes a large fraction of edge sites, which, along with its high surface area, leads to excellent activity for electrocatalytic hydrogen evolution. This work elucidates how morphological control of materials at the nanoscale can significantly impact the surface structure at the atomic scale, enabling new opportunities for enhancing surface properties for catalysis and other important technological applications.

Engineering the surface structure of MoS2 to preferentially expose active edge sites for electrocatalysis

The Al x Ga1−x As/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications Even though the basic Al x Ga1−x As/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J S Blakemore, J Appl Phys 5 3, R123 (1982)] The purpose of this review is (i) to obtain and clarify all the various material parameters of Al x Ga1−x As alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications A complete set of material parameters are considered in this review for GaAs, AlAs, and Al x Ga1−x As alloys The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs) The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic‐band structure, (7) external perturbation effects on the band‐gap energy, (8) effective mass, (9) deformation potential, (10) static and high‐frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Frohlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant, obey Vegard’s rule well Other parameters, eg, electronic‐band energy, lattice vibration (phonon) energy, Debye temperature, and impurity ionization energy, exhibit quadratic dependence upon the AlAs mole fraction However, some kinds of the material parameters, eg, lattice thermal conductivity, exhibit very strong nonlinearity with respect to x, which arises from the effects of alloy disorder It is found that the present model provides generally acceptable parameters in good agreement with the existing experimental data A detailed discussion is also given of the acceptability of such interpolated parameters from an aspect of solid‐state physics Key properties of the material parameters for use in research work and a variety of Al x Ga1−x As/GaAs device applications are also discussed in detail

GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

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Physics of thin-film ferroelectric oxides

Random lattice disorder produced by chemical substitution in ABO3 perovskites can lead to the formation of dipolar impurities and defects that have a profound influence on the static and dynamic properties of these materials that are the prototypical soft ferroelectric (FE) mode systems. In these highly polarizable host lattices, dipolar entities form polar nanodomains whose size is determined by the dipolar correlation length, rc, of the host and that exhibit dielectric relaxation in an applied ac field. In the very dilute limit (< 0.1at.%) each domain behaves as a non-interacting dipolar entity with a single relaxation time. At higher concentrations of disorder, however, the domains can interact leading to more complex relaxational behaviour. Among the manifestations of such behaviour is the formation of a glass-like relaxor (R) state, or even an ordered FE state for a sufficiently high concentration of overlapping domains. After a brief discussion of the physics of random-site electric dipoles in dielectrics, this review begins with the simplest cases, namely the relaxational properties of substitutional impurities (e.g., Mn, Fe and Ca) in the quantum paraelectrics KTaO3 and SrTiO3. This is followed by discussions of the relaxational properties of Li-and Nb-doped KTaO3 and of the strong relaxors in the PbMg1/3Nb2/3O3 and La-substituted PbZr1−xTixO3 families. Some emphasis will be on the roles of pressure and applied dc biasing electric fields in understanding the physics of these materials including the R-to-FE crossover.

https://iopscience.iop.org/article/10.1088/0953-8984/15/9/202/pdf

The relaxational properties of compositionally disordered ABO3 perovskites

The effects of temperature and hydrostatic pressure on the static dielectric constant (epsilon) were investigated for a group of crystalline semiconductors chosen to be representative of III-V compounds (GaAs and GaP), II-VI compounds (ZnS and CdS), and group-IV (Si) materials. When combined with earlier results on the temperature and pressure dependences of the high-frequency optical (i.e., electronic) dielectric constants (epsilon/sub infinity/), the present results allow, for the compound semiconductors, determination of the lattice contribution to these effects. The results are discussed from both the microscopic and macroscopic points of view. For all the crystals studied, the pressure effects are dominated by the change in polarizability with volume, and the temperature effects by anharmonicities. The pressure dependences of the lattice contributions to the dielectric constants (epsilon/sub 11/ and epsilon/sub 33/) of hexagonal CdS are anomalous in that they increase with pressure. This behavior is most likely due to coupling between the appropriate TO modes and the TA modes which are known to soften on approaching the pressure-induced phase transition in this crystal. The transverse dynamic effective charge was calculated for the compounds, and its pressure dependence was determined for GaAs and GaP. The results and their implications are discussed.

Temperature and pressure dependences of the dielectric constants of semiconductors

Highly crystalline, size-selected silicon (Si) nanocrystals in the size range 2-10 nm were grown in inverse micelles and their optical absorption and photoluminescence (PL) properties were studied. High resolution TEM and electron diffraction results show that these nanocrystals retain their cubic diamond stuctures down to sizes {approximately}4 nm in diameter, and optical absorption data suggest that this structure and bulk-like properties are retained down to the smallest sizes produced ({approximately}1.8 nm diameter containing about 150 Si atoms). High pressure liquid chromatography techniques with on-line optical and electrical diagnostics were developed to purify and separate the clusters into pure, monodisperse populations. The optical absorption revealed features associated with both the indirect and direct bandgap transitions, and these transitions exhibited different quantum confinement effects. The indirect bandgap shifts from 1.1 eV in the bulk to {approximately}2.1 eV for nanocrystals {approximately}2 nm in diameter and the direct transition at r(l_"X - r15) blue shifts by 0.4 eV from its 3.4 eV bulk value over the same size range. Tailorable, visible, room temperature PL in the range 700-350 nm (1.8 - 3.5 eV) was observed from these nanocrystals. The most intense PL was in the violet region of the spectrum ({approximately}400 nm) and is attributed to direct electron-hole recombination. Other less intense PL peaks are attributed to surface state and to indirect bandgap recombination. The results are compared to earlier work on Si clusters grown by other techniques and to the predictions of various model calculations. Currently, the wide variations in the theoretical predictions of the various models along with considerable uncertainties in experimental size determination for clusters less than 3-4 nm, make it difficult to select among competing models.

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Optical and Electronic Properties of Si Nanoclusters Synthesized in Inverse Micelles

Highly crystalline nanoclusters of hexagonal (2H polytype) MoS2 and several of its isomorphous Mo and W chalcogenides have been synthesized with excellent control over cluster size down to ∼2 nm. These clusters exhibit highly structured, bandlike optical absorption and photoluminescence spectra which can be understood in terms of the band-structures for the bulk crystals. Key results of this work include: (1) strong quantum confinement effects with blue shifts in some of the absorption features relative to bulk crystals as large as 4 eV for clusters ∼2.5 nm in size, thereby allowing great tailorability of the optical properties; (2) the quasiparticle (or excitonic) nature of the optical response is preserved down to clusters ≲2.5 nm in size which are only two unit cells thick; (3) the demonstration of the strong influence of dimensionality on the magnitude of the quantum confinement. Specifically, three-dimensional confinement of the carriers produces energy shifts which are over an order of magnitude lar...

Synthesis and optical properties of MoS2 and isomorphous nanoclusters in the quantum confinement regime

High-quality, size-selected, nano-size (2--15 nm\ifmmode\pm\else\textpm\fi{}10%) clusters of ${\mathrm{MoS}}_{2}$ have been successfully grown inside inverse micellar cages and their optical properties have been studied. These clusters exhibit (1) large blueshifts in the optical-absorption features with decreasing cluster size due to quantum confinement, affording great tailorability in the absorption thresholds and (2) a demonstration of the crossover from bandlike (solid) to moleculelike spectra as the size of the clusters becomes smaller than that of the exciton in the bulk.

George A. Samara

Papers

The relaxational properties of compositionally disordered ABO3 perovskites

Temperature and pressure dependences of the dielectric constants of semiconductors

Optical and Electronic Properties of Si Nanoclusters Synthesized in Inverse Micelles

Synthesis and optical properties of MoS2 and isomorphous nanoclusters in the quantum confinement regime

Strong quantum-size effects in a layered semiconductor: MoS 2 nanoclusters