G
Godefridus A. M. Hurkx
Researcher at Philips
Publications - 47
Citations - 448
Godefridus A. M. Hurkx is an academic researcher from Philips. The author has contributed to research in topics: Diode & Semiconductor device. The author has an hindex of 11, co-authored 47 publications receiving 448 citations.
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Patent
Insulated gate semiconductor device having field shaping regions
TL;DR: In this article, a semiconductor body has first and second opposed major surfaces (10a and 10b), with a first region (11) of one conductivity type and a plurality of body regions (32) of the opposite conductivities type each forming a pn junction with the first region.
Patent
Semiconductor device having a plurality of resistive paths
TL;DR: In this paper, a semiconductor device has first and second opposed major surfaces (10 a and 10 b), where the first region (11) is provided between second (12 or 120) and third (14) regions.
Patent
Dielectric antifuse for electro-thermally programmable device
Hans Marc Bert Boeve,Karen Attenborough,Godefridus A. M. Hurkx,Prabhat Agarwal,H.G.A. Huizing,Michael A. A. in 't Zandt,Jan W. Slotboom +6 more
TL;DR: In this paper, a blown anti-iuse has been used as a tiny electrical heater for programming a thermally programmable memory with a blow hole in the dielectric.
Patent
Insulated gate field effect device
TL;DR: In this paper, an insulated gate structure (30,31 ) adjoins each conduction channel area to control majority charge carrier flow from the source regions ( 33 ) through the first region ( 11 ) to a further region ( 14 ) adjoining the second major surface ( 10 b ).
Patent
Semiconductor device comprising a pn-heterojunction
Godefridus A. M. Hurkx,Prabhat Agarwal,Abraham Rudolf Balkenende,Magnee Petrus Hubertus Cornelis,Wagemans Melanie Maria Hubertina,Erik P. A. M. Bakkers,Erwin A. Hijzen +6 more
TL;DR: In this paper, a pn-heterojunction formed by a nanowire (3) of 111-V semiconductor material and a semiconductor body (1) comprising a group IV semiconductor materials is described.