The absorption and emission properties of transition metal (TM)-doped zinc chalcogenides have been investigated to understand their potential application as room-temperature, mid-infrared tunable laser media. Crystals of ZnS, ZnSe, and ZnTe, individually doped with Cr/sup 2+/, Co/sup 2+/, Ni/sup 2+/, or Fe/sup 2+/ have been evaluated. The absorption and emission properties are presented and discussed in terms of the energy levels from which they arise. The absorption spectra of the crystals studied exhibit strong bands between 1.4 and 2.0 /spl mu/m which overlap with the output of strained-layer InGaAs diodes. The room-temperature emission spectra reveal wide-band emissions from 2-3 /spl mu/m for Cr and from 2.8-4.0 /spl mu/m for Co, Cr luminesces strongly at room temperature; Co exhibits significant losses from nonradiative decay at temperatures above 200 K, and Ni and Fe only luminesce at low temperatures, Cr/sup 2+/ is estimated to have the highest quantum yield at room temperature among the media investigated with values of /spl sim/75-100%. Laser demonstrations of Cr:ZnS and Cr:ZnSe have been performed in a laser-pumped laser cavity with a Co:MgF/sub 2/ pump laser. The output of both lasers were determined to peak at wavelengths near 2.35 /spl mu/m, and both lasers demonstrated a maximum slope efficiency of approximately 20%. Based on these initial results, the Cr/sup 2+/ ion is predicted to be a highly favorable laser ion for the mid-IR when doped into the zinc chalcogenides; Co/sup 2+/ may also serve usefully, but laser demonstrations yet remain to be performed.

Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media

The spectroscopic and laser kinetic properties of the trivalent ytterbium ion in various solid-state media are reviewed. Contrasts between four- and quasi-three-level lasers (e.g., Nd:YAG versus Yb:YAG) are highlighted. Various architectures suitable for use in high-brightness high-power Yb:YAG lasers are examined, and achieved laser performance levels are summarized. The properties of alternative ytterbium-doped laser gain media are reviewed, and early laser results are cited.

Ytterbium solid-state lasers. The first decade

Ytterbium solid-state lasers: The first decade

Infrared (2–12 μm) solid-state laser sources: a review

Transition metal (TM) doped II-VI chalcogenide laser materials offer a unique blend of physical, spectroscopic, and technological parameters that make them the gain media of choice for cost effective broadly tunable lasing in the Mid-IR. The II-VI semiconductor hosts provide a low phonon cut-off, broad IR transparency, and high thermal conductivity. When doped with transition metal ions, these materials feature ultrabroadband gain, low saturation intensities, and large pump absorption coefficients. This combined with the low-cost mass production technology of crystal fabrication by postgrowth thermal diffusion, as well as broad availability of convenient pump sources, make these materials ideal candidates for broadly tunable mid-IR lasing in CW, gain-switched, free running, and mode-locked regimes of operation. This review summarizes experimental results on optically pumped lasers based on Cr and Fe doped II-VI wide band semiconductors providing access to the 1.9-6 μm spectral range with a high (exceeding 60%) efficiency, multi-Watt-level (18 W in gain switch and 30 W in pure CW) output powers, tunability in excess of 1000 nm, short-pulse (<;50 fs) multi-watt oscillation, multi-Joule long-pulse output energy, and narrow spectral linewidth (<;100 kHz).

Progress in Mid-IR Lasers Based on Cr and Fe-Doped II–VI Chalcogenides

We report room-temperature operation of an all-solid-state broadly tunable continuous-wave Cr(2+):ZnSe laser. Output power of 250 mW, an absorbed power slope efficiency of 63%, and continuous tunability from 2138 to 2760 nm are demonstrated.

Continuous-wave broadly tunable Cr2+:ZnSe laser.

We describe active mode locking of a Cr2+:ZnSe laser operating near 2.5 µm. The laser produces 4.4-ps transform-limited Gaussian-shaped pulses and produces 82 mW of average power.

Mode-locked Cr(2+):ZnSe laser.

Broadly tunable near- and mid-infrared lasers are of interest for a variety of applications including high-resolution spectroscopy, metrology, pumping of nonlinear optical frequency converters such as optical parametric oscillators (OPOs) and standoff chemical sensing. Tunable laser sources in the 2-3 um region include Cr2+ doped chalcogenide lasers; cryogenic systems, such as color center lasers; limited tunability devices, such as Tm and Ho lasers, gas or chemical lasers, and diode lasers; and nonlinear optical devices such as OPOs. Transition-metal-doped chalcogenide lasers are of high interest because of their high versatility, broad room-temperature wavelength tunability, high optical efficiencies, and their potential to be scaled to high powers via direct diode or fiber laser pumping. To date, continuous-wave, gain-switched, Q-switched and mode-locked laser operation has been demonstrated. Material advantages include broad absorption and emission bands, high fluorescence quantum efficiencies at room temperature, high gain cross-sections, and minimal loss mechanisms such as excited-state absorption or upconversion. Additionally, the materials can be produced by a variety of methods, including several direct growth techniques and diffusion doping. The principal material disadvantages include a relatively large change in refractive index with temperature (large dn/dT), which can induce thermal lensing, and a short, microseconds, energy storage time. In this paper we review fundamental material properties, the current state-of-the-art of continuous-wave and pulsed Cr2+ doped chalcogenide lasers, and recent research results.

Chromium-doped chalcogenide lasers

Growth and characterization of Er-doped KPb2Cl5 as laser host crystal

Broadly tunable infrared laser sources are of interest for a variety of applications including differential absorption lidar, differential scattering lidar, multi-spectral detection and imaging, hard target identification and discrimination, optical communications in poor visibility conditions, and spectroscopy. For chemical sensing applications, sources are particularly sought in the mid-wave infrared (MWIR) and long-wave infrared (LWIR) spectral regions. A variety of laser and nonlinear optical devices have been demonstrated that access these wavelengths. In particular, CTI is developing novel, tunable, narrow linewidth transmitters for coherent and direct detection lidar measurement applications. An example is a multi-watt Cr:ZnSe laser that is tunable over the 2.1 to 2.8 micrometers wavelength region. This laser has been used to pump-tune optical parametric oscillators (OPOs) that are broadly tunable across the MWIR and LWIR. We are also developing tunable Yb lasers that can be used to pump OPOs that emit signal beams in the eyesafe 1.55 micrometers region while generating idler beams that access the 3 to 4 micrometers MWIR band. This paper describes these sources.

Gregory J. Wagner

Papers

Continuous-wave broadly tunable Cr2+:ZnSe laser.

Mode-locked Cr(2+):ZnSe laser.

Chromium-doped chalcogenide lasers

Growth and characterization of Er-doped KPb2Cl5 as laser host crystal

Tunable infrared laser sources for DIAL