G
Guan Ru Liu
Researcher at National Sun Yat-sen University
Publications - 6
Citations - 50
Guan Ru Liu is an academic researcher from National Sun Yat-sen University. The author has contributed to research in topics: Metal gate & Field-effect transistor. The author has an hindex of 3, co-authored 6 publications receiving 45 citations.
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Journal ArticleDOI
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
Kuan-Chang Chang,Jung Hui Chen,Tsung-Ming Tsai,Ting-Chang Chang,Ting-Chang Chang,Syuan Yong Huang,Rui Zhang,Kai Huang Chen,Yong En Syu,Geng Wei Chang,Tian Jian Chu,Guan Ru Liu,Yu Ting Su,Min Chen Chen,Jhih Hong Pan,Kuo Hsiao Liao,Ya-Hsiang Tai,Tai Fa Young,Simon M. Sze,Simon M. Sze,Chi Fong Ai,Min Chuan Wang,Jen-Wei Huang +22 more
TL;DR: In this article, the dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses.
Journal ArticleDOI
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
Szu-Han Ho,Ting-Chang Chang,Chi Wei Wu,Wen-Hung Lo,Ching-En Chen,Jyun Yu Tsai,Guan Ru Liu,Hua Mao Chen,Ying Shin Lu,Bin Wei Wang,Tseung-Yuen Tseng,Osbert Cheng,Cheng Tung Huang,Simon M. Sze,Simon M. Sze,Simon M. Sze +15 more
TL;DR: In this article, the authors investigated the gate current after negative bias temperature-instability (NBTI) in HfO2/metal gate p-channel metal-oxide-semiconductor field effect transistors.
Journal ArticleDOI
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
Szu-Han Ho,Ting-Chang Chang,Bin Wei Wang,Ying Shin Lu,Wen-Hung Lo,Ching-En Chen,Jyun Yu Tsai,Hua Mao Chen,Guan Ru Liu,Tseung-Yuen Tseng,Osbert Cheng,Cheng Tung Huang,Xixin Cao +12 more
TL;DR: In this article, extra traps measured by charge pumping technique in the high voltage zone in p-channel metaloxide-semiconductor field effect transistors with HfO2/metal gate stacks were investigated.
Journal ArticleDOI
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
Szu-Han Ho,Ting-Chang Chang,Ting-Chang Chang,Ying Shin Lu,Wen-Hung Lo,Ching-En Chen,Jyun Yu Tsai,Hua Mao Chen,Chi Wei Wu,Hung Ping Luo,Guan Ru Liu,Tseung-Yuen Tseng,Osbert Cheng,Cheng Tung Huang,Simon M. Sze,Simon M. Sze,Simon M. Sze +16 more
TL;DR: In this paper, anomalous traps measured by charge pumping technique in high voltage in HfO2/metal gate n-channel metal-oxide-semiconductor field effect transistors were investigated.
Journal ArticleDOI
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
Ching-En Chen,Ting-Chang Chang,Ting-Chang Chang,Ting-Chang Chang,Bo You,Wen-Hung Lo,Szu-Han Ho,Chih Hao Dai,Jyun Yu Tsai,Hua Mao Chen,Guan Ru Liu,Ya-Hsiang Tai,Tseung-Yuen Tseng +12 more
TL;DR: In this article, Chen et al. proposed a method to use a two-dimensional laser scanner for the development of an advanced Optoelectronic technology center at National Cheng Kung University, Tainan 701.