The invention provides a lateral power device with a mixed conduction mode and a preparation method thereof. The lateral power device comprises a P type substrate, a buried oxide layer, an N type drift region, a P type base region, an N type buffer region, an N type source region, and a P type contact region, a P type collector region, an emitter, a collector, a gate dielectric layer, and a gate electrode. An N type bar and a P type bar are formed on the surface of the N type drift region and are arranged on the surface of the device drift region at an interval in a direction perpendicular tothe channel length direction; and a P type RESURF layer is formed in the drift region below the N type bar and a P type bar. A dielectric trench structure is formed between the N type bar, the P typebar, and the P type RESURF layer and the N type buffer region. The concentrations of the N type bar and a P type bar are larger than that of the N type drift region; and the depth of the dielectric trench structure is not less than depths of the N type bar, the P type bar, and the P type collector region. According to the invention, mixed conduction of the surface SJ-LDMOS and LIGBT is realized; the low condition drop is obtained; the voltage-withstanding performance is improved; the switching speed is increased; the turn-off losses are reduced; the snapback effect is eliminated; and the device performance is improved.

Lateral power device with mixed conduction mode and preparation method thereof

The invention provides an SOI-RC-LIGBT device and a preparation method thereof The SOI-RC-LIGBT device comprises an N-type substrate, a buried oxide layer, an N-type drift region, a trench gate structure, a P-type base region, an N+ source region, a P+ contact region, an emitting electrode, an oxide layer, an N-type buffer region and a P-type collector region; an N-type strip is arranged on the surface of the portion, between the P-type base region and the N-type buffer region, of the N-type drift region, and a P-type buried layer is arranged in the portion, below the N-type strip, of the drift region; a medium trench structure is arranged between the right sides of the N-type strip and the P-type buried layer and the left sides of the N-type buffer region and the P-type collector region;an N+ collector region is arranged between the N-type strip and the medium trench structure According to the SOI-RC-LIGBT device, while the IGBT conduction characteristic snapback phenomena are eliminated, the breakdown voltage of the device is improved, the forward conduction voltage drop of the device is reduced, the shutoff speed is increased, the shutoff loss is reduced, and meanwhile, the reverse recovery characteristics of an integrated free-wheeling diode are improved

SOI-RC-LIGBT device and preparation method thereof

A binary channel RC-LIGBT device and a manufacturing method therefor are disclosed. The invention belongs to the field of power semiconductor integrated circuits and specifically relates to a reverse conducting-LIGBT/RC-LIGBT and a manufacturing method therefor that are used for suppressing snapback phenomena of a conventional RC-LIGBT device, improving characteristics of backward diodes and improving device stability and reliability. The RC-LIGBT device disclosed in the invention has a unilateral electric conduction path having binary channels, the unilateral electric conduction path is formed by introducing a composite structure at a collector electrode end of the device, impact exerted on conduction characteristics by an N type collecting zone can be completely shielded in a forward direction LIGBT work mode, the snapback phenomena can be completely eliminated, the RC-LIGBT device disclosed in the invention has the same low conduction voltage drop as the conventional LIGBT, device stability and reliability can be improved, two freewheel channels are provided at the collector electrode end in a backward diode freewheel work mode, freewheeling capacity of the RC-LIGBT device is optimized, and the RC-LIGBT device is enabled to have a small conduction voltage drop.

Binary channel RC-LIGBT device and manufacturing method therefor

The invention discloses a power factor correction circuit without requiring an electrolytic capacitor and with a secondary ripple wave suppression function and quick dynamic response speed. The power factor correction circuit consists of a conventional power factor correction circuit and a bidirectional direct current converter; a power grid voltage passes through a rectifying bridge and is connected with the input end of the conventional power factor correction circuit; and the output end of the conventional power factor correction circuit is connected with the bidirectional direct current converter in parallel and connected with a load. A load side voltage is directly controlled by the bidirectional direct current converter, and load side voltage is controlled into a direct current voltage without secondary ripple wave; and meanwhile, the conventional power factor correction circuit performs power factor correction and controls a voltage average value of an auxiliary capacitor in the bidirectional direct current converter. The load side voltage of the power factor correction circuit is a direct current value without secondary ripple wave, so that quick dynamic response speed is realized; and the whole circuit does not need an electrolytic capacitor, so that high reliability and long service life are achieved.

Power factor correction circuit without requiring electrolytic capacitor and with secondary ripple wave suppression function and quick dynamic response speed

The invention provides an LED backlight drive circuit, an LED backlight device and a display device. The LED backlight drive circuit is used for driving an LED backlight circuit which comprises at least one LED backlight unit, the first ends of the LED backlight units are connected to the LED drive voltage, the LED backlight drive circuit comprises a reference voltage providing unit used for providing predetermined reference voltage for the second ends of the LED backlight units, the LED backlight drive circuit further comprises at least one temperature compensation resistor unit, the temperature compensation resistor units are connected between the seconds ends of the LED backlight units and the level output end, and the resistance values of the temperature compensation resistor units increase along with rising of temperature and decrease along with falling of temperature. It can be ensured that current flowing through an LED keeps within the certain range, the LED reliability is improved, and the problems that power consumption is high and the service life of LEDs is short in the prior art are solved.

LED backlight drive circuit, LED backlight device and display device

The invention relates to the technical field of semiconductor devices, and specifically relates to a VDMOS device with a relatively-low Miller capacitor and a manufacturing method of the VDMC device. According to the technical scheme of the invention, a groove filled with oxide is arranged in an epitaxial layer below grids, and the grids are controlled to be above a thick oxide layer medium, so that a semiconductor surface high electric field generated at the tail end of a control grid is reduced, and the reduction of a device voltage resistance level is prevented. The VDMOS device has the advantage that the power VDMOS new structure with the relatively-low Miller capacitor can adopt a higher JFET concentration, so that the conductive resistance of the device is effectively reduced.

VDMOS device and manufacturing method thereof

The invention belongs to the technical field of power semiconductor devices, and particularly relates to a reverse conducting IGBT device. Compared with a conventional reverse conducting IGBT structure, emission electrode schottky metal is additionally arranged in source electrode metal, and an N-region is arranged below an N-type electric field stop layer so that a reverse recovery characteristic working under a freewheel diode mode is respectively improved and generation of the snapback phenomenon is suppressed. The beneficial effects of the reverse conducting IGBT device are that the reverse conducting IGBT device has short reverse recovery time, the snapback phenomenon can be eliminated at a shorter back P+ collector region, and the preparation technology of the reverse conducting IGBT device is compatible with the technology of the conventional IGBT device. The invention is especially suitable for the reverse conducting IGBT device.

Reverse conducting IGBT device

The invention belongs to the semiconductor technology field and especially relates to a transverse RC-IGBT device. Based on a traditional device structure, a N-type resistor area 11 is arranged in a collector electrode structure. Because a thin N resistor area 11 is very thin and possesses a large impedance, when the device begins to carry out positive breakover, a large voltage drop is generated on the thin N resistor area 11 under a low current so that a voltage difference is generated between a P+ collector area 9 and a N-type electric field stop layer and the device is converted into an IGBT mode from a MOSFET mode. By using the new structure provided in the invention, conversion from the MOSFET mode to the IGBT mode can be completed under the low current so that a snapback phenomenon is not generated during a conduction process. Under a follow current diode mode, a PN joint formed by a P-type base area and a N-drift area is under a positively biased state; after the voltage drop exceeds a J1 starting voltage, the device is conducted so as to conduct the current. Therefore, by using the transverse RC-IGBT device provided in the invention, the snapback phenomenon of a traditional RC-IGBT during the positive conduction process is completely eliminated.

Transverse RC-IGBT device

The invention belongs to the technical field of semiconductors, and particularly relates to a longitudinal RC-IGBT device. In the device, on the basis of a conventional device structure, an N type resistance region 11 is arranged in a collector structure. The thin N type resistance region 11 is very thin and has large impedance, and a great voltage drop is generated in the thin N type resistance region 11 with a small current when forward conducting of the device is just started, so that a voltage difference is generated between a P+ collector region 9 and an N type electric field stop layer 8, and the device is switched from an MOSFET mode to an IGBT mode. According to the novel structure provided by the invention, switching from the MOSFET mode to the IGBT mode can be finished with a very small current, so that the snapback phenomenon does not occur in a conducting process. In a freewheel diode mode, a PN junction formed by a P type base region and an N-drift region is in a positively-biased state, and the device is conductived when the voltage drop exceeds a J1 threshold voltage, so that current can be conducted. Through adoption of the longitudinal RC-IGBT device provided by the invention, the snapback phenomenon in the forward conducting process of the conventional RC-IGBT is eliminated completely.

Guo Xuyang

Papers

VDMOS device and manufacturing method thereof

Reverse conducting IGBT device

Transverse RC-IGBT device

Binary channel RC-LIGBT device and manufacturing method therefor

Longitudinal RC-IGBT device